Samsung Electronics Co., Ltd.

Young-jo Tak

Jun-youn Kim

Young-soo Park

Jae-Won Lee

Joo-sung Kim

Su-hee Chae

Hyun-gi Hong

Jae-Kyun Kim

Hyung-su Jeong

Bok-ki Min

Dong-gun Lee

Jae-won Lee

Jong-uk Seo

Hyo-ji Choi

Mi-hyun Kim

Sam-mook Kang

Eun-ha Lee

A light emitting device package includes a cell array having a first surface and a second surface located opposite to the first surface and including, on a portion of a horizontal extension line of the first surface, semiconductor light emitting units each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially located on a layer surface including a sidewall of the first conductivity type semiconductor layer; wavelength converting units corresponding respectively to the semiconductor light emitting units and each arranged corresponding to the first conductivity type semiconductor layer; a barrier structure arranged between the wavelength converting units corresponding to the cell array; and switching units arranged in the barrier structure and electrically connected to the semiconductor light emitting units.

Light emitting device package with reliably formed switching unit

Light emitting device package

A light-emitting device package is provided. The light-emitting device package includes: a substrate having a first surface and a second surface, and having a first opening and a second opening spaced apart from each other; a light-emitting structure disposed on the first surface of the substrate and vertically overlapping the first opening; and an image sensor including a photoelectric conversion region, the photoelectric conversion region being disposed in the substrate and vertically overlapping the second opening. Light from the light-emitting structure is emitted toward the second surface of the substrate through the first opening.

Light-emitting device package, display device including the same, and method of manufacturing the same

A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type on a substrate, an active layer on the first semiconductor layer, a second semiconductor layer of a second conductivity type on the active layer, the second semiconductor layer being doped with magnesium (Mg), and having an upper surface substantially parallel to an upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate, and a third semiconductor layer of the second conductivity type on the second semiconductor layer, the third semiconductor layer being doped with magnesium (Mg) at a concentration different from that of the second semiconductor layer, and having an upper surface substantially parallel to the upper surface of the substrate and a side surface inclined with respect to the upper surface of the substrate.

Semiconductor light emitting device

An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.

Apparatus for manufacturing a second substrate on a first substrate including removal of the first substrate

In a method of manufacturing a GaN substrate, a capping layer may be formed on a first surface of a silicon substrate. A buffer layer may be formed on a second surface of the silicon substrate. The second surface may be opposite the first surface. A GaN substrate may be formed on the buffer layer by performing a hydride vapor phase epitaxy (HVPE) process. The capping layer and the silicon substrate may be removed.

Method of manufacturing a gallium nitride substrate

Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7&#x2266;k&#x2266;13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.

Semipolar nitride semiconductor structure and method of manufacturing the same

A semiconductor device includes a substrate, a buffer layer on the substrate, and a plurality of nitride semiconductor layers on the buffer layer. The semiconductor device further includes at least one masking layer and at least one inter layer between the plurality of nitride semiconductor layers. The at least one inter layer is on the at least one masking layer.

Semiconductor devices and methods of manufacturing the same

A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer.

Semiconductor buffer structure, semiconductor device including the semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure

According to example embodiments, a semiconductor light emitting device includes a first semiconductor layer, a pit enlarging layer on the first semiconductor layer, an active layer on the pit enlarging layer, a hole injection layer, and a second semiconductor layer on the hole injection layer. The first semiconductor layer is doped a first conductive type. An upper surface of the pit enlarging layer and side surfaces of the active layer define pits having sloped surfaces on the dislocations. The pits are reverse pyramidal spaces. The hole injection layer is on a top surface of the active layer and the sloped surfaces of the pits. The second semiconductor layer doped a second conductive type that is different than the first conductive type.

Semiconductor light emitting device including hole injection layer

A gallium nitride based semiconductor device includes a silicon-based layer doped simultaneously with boron (B) and germanium (Ge) at a relatively high concentration, a buffer layer on the silicon-based layer, and a nitride stack on the buffer layer. A doping concentration of boron (B) and germanium (Ge) may be higher than 1&#xd7;10/cm.

Gallium nitride based semiconductor device and method of manufacturing the same

Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition.

Low-defect semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device includes forming a silicon substrate, forming a buffer layer on the silicon substrate, and forming a nitride semiconductor layer on the buffer layer. The buffer layer includes a first layer, a second layer, and a third layer. The first layer includes AlInGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;x+y&#x2266;1) and has a lattice constant LP1 that is smaller than a lattice constant LP0 of the silicon substrate. The second layer is formed on the first layer, includes AlInGaN (0&#x2266;x&#x3c;1, 0&#x2266;y&#x3c;1, 0&#x2266;x+y&#x3c;1), and has a lattice constant LP2 that is greater than LP1 and smaller than LP0. The third layer is formed on the second layer, includes AlInGaN (0&#x2266;x&#x3c;1, 0&#x2266;y&#x3c;1, 0&#x2266;x+y&#x3c;1), and has a lattice constant LP3 that is smaller than LP2.

Semiconductor buffer structure, semiconductor device including the same, and method of manufacturing semiconductor device using semiconductor buffer structure

A semiconductor device may reduce a dislocation density and tensile stress by forming a plurality of interlayers between neighboring clad layers. The semiconductor device may include a plurality of clad layers on a substrate and a plurality of interlayers between neighboring clad layers.

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Hwaseong-si, South Korea

Young-jo Tak