Lg Semicon Co., Ltd.

Other

Young Jin Song

Jun Seok Lee

Yong Kak Choi

Jong-moon Choi

Chang Reol Kim

Hun Hur

Chang Kwon Hwangbo

An optical filter according to an embodiment of the present invention comprises a first mirror layer where a first high refraction material layer and a first low refraction material layer are alternately deposited, a spacer layer continuously deposited above one side surface of the first mirror layer, and comprises a plurality of second high refraction material layers, and a second mirror layer located to face the first mirror layer with the spacer layer interposed therebetween, and where a third high refraction material layer and a third low refraction material layer are alternately deposited.

Optical filter and sensor system comprising the same, and method for preparing halogenated amorphous silicon thin film for optical filter

A multistage phase shift mask includes a light transmissive substrate having light shielding regions and light transmissive regions. A shielding layer is disposed on the shielding regions of the substrate and a phase shifter layer extends over the light transmissive regions between a pair of the shielding regions. A first etched portion on the substrate is adjacent to the phase shifter layer that contacts with the substrate and a second etched portion on the substrate is between the phase shifter layer and the first etched portion of the substrate. The second etched portion consists of a gradual concave slope allowing a phase shift from approximately 0 to 180 degrees.

Method for fabricating a multistage phase shift mask

A method for fabricating a transistor includes the steps of forming a gate insulation film on a substrate, forming a gate electrode on the gate insulation film and forming a first insulation film pattern on the gate electrode. A side wall spacer is formed at side surfaces of the first insulation film pattern and the gate electrode. The gate insulation film is etched to expose a portion of a surface of the substrate. An epitaxial layer is formed on the substrate where the gate insulation film is etched. The side wall spacer is removed and a thermal oxide film is grown on a portion corresponding to where the side wall spacer is removed and on an upper portion of the epitaxial layer. A source/drain region is formed by ion-implanting an impurity into the epitaxial layer.

Transistor fabrication method

A method for forming a multi-layer resist (MLR) pattern capable of preventing a generation of a charge-up effect in an exposure to electron beams and reducing alignment detect errors, and employing a silylation process, thereby achieving an improvement in resonance. The method includes the steps of forming a primary alignment mark on a silicon substrate formed with a cell part including a plurality of cell patterns having steps, depositing a lower deposition film over the silicon substrate, coating a lower resist film over the lower deposition film, subjecting a portion of the lower resist film to a light exposure and a development to form a secondary alignment mark, forming an intermediate insulating layer over the lower resist film, coating an upper resist film over the intermediate insulating layer to form a MLR film, subjecting the upper resist film to a light exposure to fork a latent image pattern at a non-exposed portion of the upper resist film, subjecting the resulting structure to a silylation to form a silylated layer over the upper resist film, etching the upper resist film to form an upper resist pattern and removing the silylated layer, patterning the intermediate insulating layer by use of the upper resist pattern as a mask, and etching the lower resist film by use of the intermediate insulating layer as a mask, thereby forming a MLR pattern.

Method for forming multi-layer resist pattern

A halftone phase shift mask and a method for forming a halftone phase shift mask. The method includes: forming a halftone pattern material layer on a substrate; defining positions for forming more than one open region of a desired pattern and defining positions for forming one or more dummy open regions that can offset respective new side lobes having a high intensity formed by overlap of side lobes of light irradiated onto the substrate as well as the halftone material layer; and forming the patterned open regions and dummy open regions that can offset respective new side lobes at the defined positions on the halftone pattern material layer by subjecting the halftone pattern material layer to patterning.

Growing community of inventors

Seoul, South Korea

Young Jin Song