Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Young-Jin Noh

Bon-Young Koo

Chul-Sung Kim

Sung-Kweon Baek

Si-Young Choi

Ki-hyun Hwang

Ji-Hyun Kim

Yu-Gyun Shin

Jung-Sub Lee

Jin-Hwa Heo

Sung-Mo Gu

A method for fabricating a substrate includes forming a first substrate including a thin film transistor array, and inspecting a first surface of an inspecting device, wherein inspecting the first surface of the inspection device includes: generating first measurement data by detecting a first measurement light that is parallel to a surface of an inspection region in the first surface, generating second measurement data by detecting a second measurement light that is parallel to the surface of the inspection region, and inspecting a state of a surface of the inspection region by comparing the first measurement data with the second measurement data.

Method of inspecting device using first measurement and second measurement lights

Methods of forming an insulating film include forming an insulating film on a substrate. A first impurity is injected into the insulating film using a thermal process under a first set of processing conditions to form a first impurity concentration peak in a lower portion of the insulating film. A second impurity is injected into the insulating film using the thermal process under a second set of processing conditions, different from the first set of processing conditions, to form a second impurity concentration peak in an upper portion of the insulating film. Injecting the first impurity and injecting the second impurity may be carried out without using plasma and the first impurity concentration peak may be higher than the second impurity concentration peak.

Methods of forming impurity containing insulating films and flash memory devices including the same

A semiconductor device includes a semiconductor substrate having a surface, buried isolation regions protruding from the surface of the semiconductor substrate, and a first insulating layer on the surface of the semiconductor substrate between the isolation regions and including a fluorine, nitrogen, and/or heavy hydrogen impurity. A floating electrode is on the first insulating layer, a second insulating layer is on the floating electrode and the isolation regions, and a control gate electrode is on the second insulating layer. Related methods of forming semiconductor devices are also disclosed.

Semiconductor devices having tunnel and gate insulating layers

Fabrication of a nonvolatile memory device includes sequentially forming a tunnel oxide layer, a first conductive layer, and a nitride layer on a semiconductor substrate. A stacked pattern is formed from the tunnel oxide layer, the first conductive layer, and the nitride layer and a trench is formed in the semiconductor substrate adjacent to the stacked pattern. An oxidation process is performed to form a sidewall oxide layer on a sidewall of the trench and the first conductive layer. Chlorine is introduced into at least a portion of the stacked pattern subjected to the oxidation process. Introducing Cl into the stacked pattern may at least partially cure defects that are caused therein during fabrication of the structure.

Methods of fabricating non-volatile memory devices including a chlorine cured tunnel oxide layer

Methods of forming semiconductor devices having tunnel and gate insulating layers

In a method of forming a thin-film structure employed in a non-volatile semiconductor device, an oxide film is formed on a substrate. An upper nitride film is formed on the oxide film by nitrifying an upper portion of the oxide film through a plasma nitration process. A lower nitride film is formed between the substrate and the oxide film by nitrifying a lower portion of the oxide film through a thermal nitration process. A damage to the thin-film structure generated in the plasma nitration process may be at least partially cured in the thermal nitration process, and/or may be cured in a post-thermal treatment process.

Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devices

Growing community of inventors

Gyeonggi-do, South Korea

Young-Jin Noh