Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kia Motors Corporation

Korea Institute of Ceramic Engineering and Technology

Young Jin Kwon

Kohji Kanamori

Seok Cheon Baek

Woong Seop Lee

Shin-Hwan Kang

Young-Hwan Son

Ji Sung Cheon

Jong Seon Ahn

Hyung In Yun

Byung Hyun Choi

Sung Hun Jung

Mi Jung Ji

Jae H Sang

Yong Tae An

Eun Kyung Kim

Kun O Ahn

Jun K Bae

A three-dimensional semiconductor device includes an upper substrate, a gate-stacked structure on the upper substrate, the gate-stacked structure including gate electrodes stacked within a memory cell array region, while being spaced apart from each other in a direction perpendicular to a surface of the upper substrate, and extending into an extension region adjacent to the memory cell array region to be arranged within the extension region to have a staircase shape, and at least one through region passing through the gate-stacked structure within the memory cell array region or the extension region, the at least one through region including a lower region and an upper region wider than the lower region.

Three-dimensional semiconductor device

A vertical memory device includes gate electrodes on a substrate, a channel extending through the gate electrodes, and a contact plug extending through the gate electrodes. The gate electrodes are stacked in a first direction substantially vertical to an upper surface of the substrate and arranged to have a staircase shape including steps of which extension lengths in a second direction substantially parallel to the upper surface gradually increase from a lowermost level toward an uppermost level. A pad at an end portion of each of the gate electrodes in the second direction has a thickness greater than those of other portions thereof. The channel extends in the first direction. The contact plug extends in the first direction. The channel contacts the pad of a first gate electrode among the gate electrodes to be electrically connected thereto, and is electrically insulated from second gate electrodes among the gate electrodes.

Vertical memory devices and methods of manufacturing the same

A draw-out handle of a tailgate is a tailgate handle pushed by a user is drawn out by the operation of a motor and the tailgate is opened and closed using the drawn-out tailgate handle. For this purpose, a draw-out handle of a tailgate includes a slidably movable tailgate handle, a motor unit for moving the tailgate to be drawn out or returned, a handle operation detection unit for detecting the operation of the tailgate handle pushed by a user, and/or a body control module (BCM) for drawing out the tailgate handle and unlocking a latch unit when receiving a handle operation signal of the handle operation detection unit.

Draw-out handle of tailgate

A linear center rail structure for a sliding door includes a linear center rail, a roller part, a base, and an arm. The linear center rail is disposed on a side outer panel of a vehicle. The roller part is guided by the center rail, slid along the center rail, and has hinge holes formed at an end portion thereof. The base is fixed to a sliding door panel and has slots formed in a pop-up direction of the sliding door panel. The arm has one end at which a first hinge shaft rotatably coupled to the hinge holes of the roller part is disposed and the other end at which a second hinge shaft fitted into the slots of the base to thereby be slidably and rotatably coupled to the base is disposed.

Linear center rail structure for sliding door

The present disclosure relates to a method of synthesis of Lithium Titanate Oxide used for a cathode of Lithium ion battery, the method comprising: (A) diluting TiClwith TiOCl; (B) adding YClor NbClat the rate of 0.1&#x2dc;2 mol % to Ti(mol); (C) forming a complex salt by dissolving to put at least one selected from a group consisting of Hydroxy propyl cellulose or Polyethylene glycol in a solvent, the Hydroxy propyl cellulose being a complexing agent and being a dispersing agent as well, whereas the Polyethylene glycol being a dispersing agent; (D) synthesizing a titanium precursor by adding an aqueous ammonia solution; (E) preparing Y or Nb doped titanium dioxide(TiO) powder by heat-treating the synthetic product in a temperature of 500&#x2dc;700&#xb0; C.; and (F) mixing the Y or Nb doped TiOpowder with LiOH.HO and heat-treating the mixture in a temperature of 800&#x2dc;900&#xb0; C.

Method of synthesis of high dispersed spherical Y or Nb doped lithium titanate oxide using titanium tetrachloride and lithium hydroxide

A linear type center rail link structure of a sliding door for a vehicle includes: a linear type center rail corresponding to the sliding door and mounted at a side of a car body; a base provided to be movable along the center rail; a link arm having one end rotatably inserted into the base; a slider rotatably connected to the other end of the link arm and having an outer side coupled to the sliding door slid from the car body; and a latch part provided in the base to limit rotation of the link arm. Therefore, an indoor invasion amount of the center rail is minimized, thereby making it possible to secure an indoor space, the linear type center rail is used, thereby making it possible to improve a design of a vehicle, and the link structure is provided, thereby making it possible to improve operability.

Linear type center rail link structure of sliding door for vehicle

A tailgate outside handle assembly may include a housing installed in an outer panel of a tailgate, an actuator unit, a manipulating handle installed in the housing and having a manipulation portion in a front surface thereof, and a hinge shaft that may be coupled to a top end portion of a rear surface of the manipulation portion, wherein a bottom end portion of the manipulation portion may be engaged with the actuator unit and selectively rotated about the hinge shaft such that after the manipulation portion may be withdrawn to the outside of the housing by a driving force of the actuator unit when the tailgate may be to be opened, the manipulating handle works as a handle.

Tailgate outside handle assembly

A method for manufacturing mask ROMs is disclosed, wherein a semiconductor substrate of a first conductive type, on which a gate insulating layer, a poly-silicon layer, source and drain regions and a spacer are formed is stored after depositing the entire surface of the structure with a protection layer until the next steps such as programming, so that the poly-silicon gate and the source and drain regions of the structure can be prevented from being polluted with organisms or matriums, etc. by forming a protection layer before the storage, thereby improving the efficiency and reliability of mask ROMs, and the ROM data region can be checked during the etching of the protecting layer for distinguishing the defective chips simply and efficiently in a short manufacturing time.

Growing community of inventors

Seoul, South Korea

Young Jin Kwon