Samsung Electronics Co., Ltd.

Young-Jae Tak

Mun-Pyo Hong

Chang-Oh Jeong

Myung-Koo Hur

Chi-Woo Kim

Yang-Sun Kim

Chun-Gi You

Jang-Soo Kim

Woon-Yong Park

Sang-Ki Kwak

Kwon-Young Choi

Myung-Jae Park

Chua-Gi You

Jueng-Gil Lee

An LCD having a plurality of test pads applied with a common voltage, covered with respective shielding conductor or located sufficiently far from pixels. A gate wire including pluralities of gate lines and test pads disconnected from the gate lines and located near one ends of the gate lines, and a common electrode wire including a plurality of common electrodes and a common electrode pad connected to the common electrode electrodes are formed on a substrate, and covered with a gate insulating film. A data wire and a pixel electrode wire are formed thereon and covered with a passivation film. The passivation film and the gate insulating film have contact holes exposing the test pads and the common electrode pad. A plurality of connecting members which are connected to the test pads and the common electrode pad through the contact holes are formed on the passivation film. Alternatively, the passivation film and the gate insulating layer have contact holes exposing only the common electrode pad, and a plurality of shielding members are provided on the passivation layer to be connected to the common electrode pad and to cover the test pads. Alternatively, the distance between the gate lines and the test pads is equal to or larger than twice the width of the pixel.

Liquid crystal display

The Mo or MoW composition layer has a low resistivity of less than 15 &#x3bc;&#x3a9;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF+Ocan prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF+HCl (+He) or SF+Cl(+He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF, CHF, CHClF, CHF, and CF, yields good TFT characteristics, and Hplasma treatment can further improve the TFT characteristics.

Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof

The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF &plus;O can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF &plus;HCl (&plus;He) or SF &plus;Cl (&plus;He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF , CHF , CHClF , CH F, and C F , yields good TFT characteristics, and H plasma treatment can further improve the TFT characteristics.

Composition for wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof

The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with An Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF &plus;O can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF &plus;HCl (&plus;He) or SF &plus;Cl (&plus;He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF , CHF , CHClF , CH F, and C F , yields good TFT characteristics, and H plasma treatment can further improve the TFT characteristics.

The Mo or MoW composition layer has a low resistivity of less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy enchant or a Cr enchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor display along with an Al layer or a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can be used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using polymer layer, an etch gas system using CF &plus;O can prevent the etch of the Mo or MoW alloy layer, and an etch gas of SF &plus;HCl(&plus;He) or SF &plus;Cl (&plus;He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched using the Mo or MoW layer as a mask, using an etch gas system that employs a gas such as hydrogen halide and at least one gas selected from CF , CHF , CHClF , CH F, and C F , yields good TFT characteristics, and H plasma treatment can further improve the TFT characteristics.

The Mo or MoW composition layer has the low resistivity less than 15 &mgr;&OHgr;cm and is etched to have a smooth taper angle using an Al alloy etchant or a Cr etchant, and the Mo or MoW layer is used for a wiring of a display or a semiconductor device along with an Al layer and a Cr layer. Since the Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single MoW layer can used as a wiring by itself. When contact holes are formed in the passivation layer or the gate insulating layer, a lateral etch is reduced by using a polymer layer, an etch gas system CF &plus;O can prevent the etch of the Mo or MoW alloy layer, and an etch gas SF &plus;HCl(&plus;He) or SF &plus;Cl (&plus;He) can form the edge profile of contact holes to be smoothed. Also, when an amorphous silicon layer formed under the Mo or MoW layer is etched by using the Mo or MoW layer as a mask, to use an etch gas system such as hydrogen halide and at least one selected from CF , CHF , CHClF , CH F and C F yield the good characteristics of TFT, and H plasma treatment can cause the characteristics of the TFT to be improved.

Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and manufacturing method thereof

A liquid crystal display has wires made of aluminum alloy layer, and two molybdenum-tungsten alloy layers MoW located on/under the aluminum alloy layer, respectively. To form a wire, the first molybdenum-tungsten alloy layer, the aluminum alloy layer, and the second molybdenum-tungsten alloy layer are sequentially deposited. The molybdenum-tungsten alloy layer has different etch rates for one etchant, depending on the deposition temperature and tungsten content ratio. Particularly, since the molybdenum-tungsten alloy layer has an etch rate similar to that of an aluminum layer and aluminum alloy layer for an aluminum etchant CH.sub.3 COOH/HNO.sub.3 /H.sub.3 PO.sub.4 /H.sub.2 O. Therefore, the first molybdenum-tungsten alloy layer having a lower etch rate than that of the aluminum layer or the aluminum alloy layer, and the second molybdenum-tungsten alloy layer having a higher etch rate than that of the aluminum layer or the aluminum alloy layer may be formed by adjusting deposition temperature and tungsten content ratio. Accordingly, the wires have a gradually sloped taper angle.

Liquid crystal display having wires made of molybdenum-tungsten alloy

Since Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single Mo or MoW layer can be used as a wiring by itself of large scale and high resolution liquid crystal. The Mo or MoW layer has the low resistivity of less than 15 .mu..OMEGA.cm and is etched to have a smooth taper angle using an Al etchant with Al or Al alloy. Therefore, it is possible to reduce the number of photolithography processes and to prevent a battery effect and generation of a hillock.

Growing community of inventors

Kyungki-do, South Korea

Young-Jae Tak