Samsung Electronics Co., Ltd.

Sungkyunkwan University

Young-jae Song

Insu Jeon

Sung-kyu Jang

Hwansoo Suh

Sung-joo Lee

Qinke Wu

Min Wang

Seong-jun Jung

Jae-young Choi

Min-woo Kim

A method of manufacturing a heterogeneous layered structure includes growing a hexagonal boron nitride sheet directly on a metal substrate in a chamber, increasing a temperature of the chamber to about 300&#xb0; C. to about 1500&#xb0; C., and forming a graphene sheet on the hexagonal boron nitride sheet by supplying a carbon source into the chamber while thermally treating the hexagonal boron nitride sheet at the increased temperature.

Heterogeneous layered structure, method of preparing the heterogeneous layered structure, and electronic device including the heterogeneous layered structure

Provided are a magnetic resistance structure, a method of manufacturing the magnetic resistance structure, and an electronic device including the magnetic resistance structure. The method of manufacturing the magnetic resistance structure includes forming a hexagonal boron nitride layer, forming a graphene layer on the boron nitride layer, forming a first magnetic material layer between the boron nitride layer and the graphene layer according to an intercalation process; and forming a second magnetic material layer on the graphene layer.

Magnetic resistance structure, method of manufacturing the magnetic resistance structure, and electronic device including the magnetic resistance structure

According to example embodiments, a method of forming a multilayer graphene structure includes forming a sacrificial layer on the growth substrate, growing a first graphene layer on the sacrificial layer using a chemical vapor deposition (CVD) method, and growing at least one more graphene layer on the growth substrate. The growing at least one more graphene layer includes removing at least a part of the sacrificial layer.

Method of forming multilayer graphene structure

Growing community of inventors

Suwon-si, South Korea

Young-jae Song