Skhynix Inc.

Young Jae An

Chang Hyun Kim

Seung Wook Oh

Gyu Tae Park

Woong Rae Kim

A clock generation circuit includes a delay-locked circuit and a duty correction circuit. The delay-locked circuit generates a delay clock signal by delaying an input clock signal and update the delay time of the input clock signal. The duty correction circuit generates a first phase clock signal and a second phase clock signal by delaying the delay clock signal, and updates the delay time of the delay clock signal. The duty correction circuit can prevent or mitigate the delay time of the input clock signal and the delay time of the delay clock signal from being updated simultaneously.

Clock generation circuit, and semiconductor device and semiconductor system using the clock generation circuit

A clock generating circuit includes a first division circuit and a second division circuit. The first division circuit is configured to generate a first group of internal clock signals by dividing a clock signal. The second division circuit is configured to generate a second group of internal clock signals by dividing a delayed clock signal, the delayed clock signal generated by an internal circuit delaying the clock signal. An operation timing of the second division circuit can be adjusted based on one of the first group of internal clock signals generated by the first division circuit.

Clock generating circuit and semiconductor apparatus using the same

A semiconductor system includes a memory controller and a memory apparatus. The memory controller provides at least first to third command address signals. The memory apparatus performs a burst read operation based on the first and second command address signals, and terminates the burst read operation by receiving the third command address signal twice. The memory apparatus continuously initializes an internal circuit that is performing the burst read operation in a section the third command address signal is received twice.

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Icheon-si, South Korea

Young Jae An