Seoul Semiconductor Co., Ltd.

Industry-University Cooperation Foundation Hanyang University

Young Hyun Kim

Motonobu Takeya

Jong Ik Lee

Kwang Yong Oh

Sung Su Son

Seong Ui An

Provided is an optical phase shifter. The optical phase shifter includes: a silicon substrate; a cladding layer disposed on the silicon substrate; an intermediate film disposed on the cladding layer; a KTN (KTaNbO) waveguide disposed on the intermediate film; a protective layer disposed on the intermediate film to cover the KTN waveguide; and first and second electrodes disposed on the intermediate film while being spaced apart from each other with the KTN waveguide interposed between the first and second electrodes, wherein a silicon waveguide is disposed inside the cladding layer while being spaced apart from the KTN waveguide with the intermediate film interposed between the silicon waveguide and the KTN waveguide.

Optical phase shifter using KTN (KTaNbO3) and manufacturing method thereof

A display apparatus including a panel substrate, and a light emitting source disposed on the panel substrate, in which the light emitting source includes a substrate, an electrode disposed on the substrate, a light emitting structure disposed on the electrode and having an n-type semiconductor layer, a p-type semiconductor layer, an n-type electrode, and a p-type electrode, a transparent electrode disposed on the light emitting structure, and an adhesive layer disposed on the light emitting structure, the n-type electrode is electrically connected to the electrode, the p-type electrode is electrically connected to the transparent electrode, and the adhesive layer is disposed between the p-type electrode and the transparent electrode.

Display apparatus and manufacturing method thereof

A display apparatus includes a support substrate, a plurality of light emitting structures regularly arranged on the support substrate, and a wavelength conversion part disposed on the plurality of light emitting structures. The wavelength conversion part includes light transmitting portions and blocking portions, the light transmitting portions being disposed on the light emitting structures, respectively, and each of the light transmitting portions including a phosphor for converting a wavelength of light emitted from the corresponding light emitting structure. The support substrate includes a plurality of conductive patterns electrically connected to the light emitting structures, and the light emitting structures are coupled to the plurality of conductive patterns.

A display apparatus including a panel substrate, a TFT panel part including a plurality of connection electrodes disposed on an upper surface of the panel substrate, and a light emitting diode part disposed on the TFT panel part and including a plurality of light emitting modules adjacent to each other, in which each of the light emitting modules includes a plurality of pixels, each of the pixels includes three sub-pixels, and the three sub-pixels include blue light emitting diodes, green light emitting diodes, and red light emitting diodes.

A display apparatus device including a panel substrate including a circuit, and a light module including light sources each including a light emitter, a connection line, a light transmission layer on the light emitter, and a light block layer on the light transmission layer, in which the light sources includes first to fourth light sources, a transmission layer of the first light source includes a first converter, a transmission layer of the fourth light source includes a second converter, the first converter includes a wavelength converter to convert a first primary light of the first light source into a red color range, the second converter converts a fourth primary light of the fourth light source into a white light, and a peak wavelength of a second primary light of the second light source is different from that of a third primary light of the third light source.

Display apparatus

A display apparatus and a method of manufacturing the same. The display apparatus includes a light emitting part including a plurality of light emitting diodes; and a thin film transistor (TFT) panel part configured to drive the plurality of light emitting diodes. The plurality of light emitting diodes are electrically connected to the plurality of TFTs, respectively, by a layer disposed between the light emitting diode part and the TFT panel part.

Display apparatus having a semiconductor light emitting source

A display apparatus including a panel substrate, a TFT panel part disposed on an upper surface of the panel substrate and including a plurality of connection electrodes, and a light emitting diode part disposed on the TFT panel part and comprising a plurality of pixels, in which each of the pixels includes at least three sub-pixels including a first sub-pixel, a second sub-pixel, and a third sub-pixel, and the first sub-pixel has a size greater than those of the second and the third sub-pixels.

A display device including a light emitting diode chip, including: a light emitting structure which includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; a second electrode which is electrically connected to the second conductive semiconductor layer; an insulation unit which is disposed to cover a part of the top surface of the second electrode and side surfaces of the light emitting structure; and a second fixed part which covers the top surface of the insulation unit and is electrically connected to the second electrode, and at least a part of which extends to the side surfaces of the light emitting structure.

Display device including a light emitting diode chip

Disclosed are a display apparatus and a method of manufacturing the same. The display apparatus includes a light emitting part including a plurality of light emitting diodes; and a thin film transistor (TFT) panel part configured to drive the plurality of light emitting diodes. The plurality of light emitting diodes are electrically connected to the plurality of TFTs, respectively, by a layer disposed between the light emitting diode part and the TFT panel part.

A display apparatus includes: a transparent substrate; a panel substrate; a light emitting diode disposed between the transparent substrate and the panel substrate; an insulation layer covering side surfaces of the light emitting diode; a first connection electrode electrically connected to the light emitting diode and disposed on the insulation layer between the insulation layer and the panel substrate; a second connection electrode on the panel substrate; and an electrode connector electrically connecting the first connection electrode to the second connection electrode, wherein the first connection electrode has an overlapping portion overlapping with the light emitting diode and a non-overlapping portion laterally extending from the overlapping portion on the insulation layer.

A light emitting diode apparatus including a substrate, a plurality of light emitting diodes regularly arranged on the substrate and configured to emit ultraviolet (UV) light, the light emitting diodes including first, second, and third sub-light emitting diodes, a plurality of phosphor layers disposed on the light emitting diodes and to convert the wavelength of light emitted from the light emitting diodes, the phosphor layers including first, second, and third phosphor layers disposed on the first, second, and third sub-light emitting diodes, respectively, and a control unit configured to supply power to the light emitting diodes, in which the phosphor layers are spaced apart from each other by a blocking region, and the control unit is configured to cause at least a portion of the light emitting diodes to emit light.

A display apparatus including a panel substrate including a TFT drive circuit for active matrix driving, a plurality of light emitting diodes, and an anisotropic conductive film electrically connecting the light emitting diodes to the panel substrate, in which the anisotropic conductive film includes an adhesive organic insulation material and conductive particles dispersed in the adhesive organic insulation material.

Growing community of inventors

Ansan-si, South Korea

Young Hyun Kim