Samsung Electronics Co., Ltd.

Kwangwoon University Industry-Academic Collaboration Foundation

Hydis Technologies Co., Ltd.

Young Hwan Park

Mi Hyun Kim

Joo Sung Kim

Ho Rim Yang

Young Jo Tak

Sam Mook Kang

Jong Uk Seo

Jun Youn Kim

Keshava Prasad

Yeon Bok Lee

Jung Chak Ahn

Hyun Seok Lee

Jong Eun Park

Kyeong Yeon Kim

Ki Taek Bae

Hyun Seong Kum

Navneet Basutkar

Young Heub Jang

Ji Hoon Bang

Sang Joo Lee

An ultraviolet semiconductor light emitting device includes a semiconductor stack, a trench, a filling insulator, and first and second electrodes. The semiconductor stack includes first and second conductivity-type semiconductor layers and an active layer therebetween that includes an AlGaN semiconductor material. The trench extends through the second conductivity-type semiconductor layer and the active layer to the first conductivity-type semiconductor layer and has a first width. The filling insulator fills the trench such that the filling insulator extends at least through the active layer in the trench and includes of an insulating material having a particular refractive index. The first electrode is connected to the first conductivity-type semiconductor layer, and the second electrode is connected to the second conductivity-type semiconductor layer.

Ultraviolet semiconductor light emitting devices

A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.

Semiconductor light emitting device

A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.

Light emitting device package

An embodiment of the present inventive concept provides an ultraviolet light emitting device comprising: a substrate having a concave or convex edge pattern disposed along an edge of an upper surface thereof; a semiconductor laminate disposed on the substrate and including first and second conductivity-type AlGaN semiconductor layers and an active layer disposed between the first and second conductivity-type AlGaN semiconductor layers and having an AlGaN semiconductor; a plurality of uneven portions extending from the edge pattern along the side surface of the semiconductor laminate in a stacking direction; and first and second electrodes connected to the first and second conductivity-type AlGaN semiconductor layers, respectively.

Ultraviolet light emitting devices

A multivision apparatus may include a display panel that includes a display screen including a first region and an adjacent second region. The first region may include first pixels, and the second region may include second pixels. The first pixels and the second pixels have different structures. The display panel may display a single image across the first region and the second region of the display screen. The multivision apparatus may include an array of interconnected display panels configured to collectively display an image, based on each given display panel displaying a separate sub-image in the first and second regions of the given display panel.

Display panels and multivision apparatuses

An ultraviolet light emitting device including a first conductivity-type AlGaN semiconductor layer; an active layer disposed on the first conductivity-type AlGaN semiconductor layer and having an AlGaN semiconductor; a second conductivity-type AlGaN semiconductor layer disposed on the active layer and having an upper surface divided into a first region and a second region; second conductivity-type nitride patterns disposed on the first region of the second conductivity-type AlGaN semiconductor layer and having an energy band gap that is smaller than an energy band gap of the second conductivity-type AlGaN semiconductor layer; a transparent electrode layer covering the second conductivity-type nitride patterns and the second region of the second conductivity-type AlGaN semiconductor layer; a light-transmissive dielectric layer disposed on the transparent electrode layer between the second conductivity-type nitride patterns; and a metal electrode disposed on the transparent electrode layer overlying the second conductivity type nitride patterns and on the light-transmissive dielectric layer.

Ultraviolet light emitting devices having a dielectric layer and a transparent electrode layer disposed in between patterned nitride semiconductor layers

A bonding device and bonding method for bonding an FPC film on a display panel through an anisotropic conductor attached to the display panel, the device including a panel supporting unit configured to support the display panel; a heating and pressurizing unit disposed on an upper area of the panel supporting unit and configured to pressurize and heat a compression area of the FPC film placed on an upper part of the anisotropic conductor towards the display panel, a film supporting unit disposed adjacent the panel supporting unit and configured to support the FPC film, and a film pre-heating unit provided in the film supporting unit and configured to pre-heat the FPC film.

Fog bonding device and method thereof

A method and corresponding apparatus for processing a shuffle instruction are provided. Shuffle units are configured in a hierarchical structure, and each of the shuffle units generates a shuffled data element array by performing shuffling on an input data element array. In the hierarchical structure, which includes an upper shuffle unit and a lower shuffle unit, the shuffled data element array output from the lower shuffle unit is input to the upper shuffle unit as a portion of the input data element array for the upper shuffle unit.

Method and apparatus for shuffling data using hierarchical shuffle units

A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer layer, the plurality of openings penetrating through the buffer layer and being spaced apart from one another; forming a plurality of cavities on the growth substrate, the plurality of cavities being aligned to respectively correspond to the plurality of openings; growing a semiconductor layer on the buffer layer, the growing the semiconductor layer including filling the plurality of openings with the semiconductor layer; and separating the buffer layer and the semiconductor layer from the growth substrate, wherein a diameter of each of the plurality of openings at a boundary between the growth substrate and the buffer layer is smaller than a diameter of each of the plurality of cavities at the boundary.

Method of manufacturing semiconductor substrate and substrate for semiconductor growth

Provided is a loop scheduling method including scheduling a first loop using execution units, and scheduling a second loop using execution units available as a result of the scheduling of the first loop. An n-th loop (n&#x3e;2) may be scheduled using a result of scheduling an (n&#x2212;1)-th loop, similar to the (n&#x2212;1)-th loop. The first loop may be a higher priority loop than the second loop.

Method of scheduling loops for processor having a plurality of functional units

In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.

CMOS image sensor for increasing conversion gain

Provided are an apparatus and method for performing a complex number operation using a Single Instruction Multiple Data (SIMD) architecture. A SIMD operation apparatus may perform, in parallel, a real part operation and an imaginary part operation of a plurality of complex numbers. The real part operation and the imaginary part operation may be performed sequentially, or in parallel.

Apparatus and method for performing a complex number operation using a single instruction multiple data (SIMD) architecture

An apparatus and method for processing a division of a binary polynomial are provided. The apparatus includes a plurality of exclusive OR (XOR) operators that may perform a selective XOR operation with respect to a conditional bit of a dividend polynomial. The plurality of XOR operators may perform selective XOR operations in parallel and accordingly, a division of a binary polynomial may be rapidly performed.

Growing community of inventors

Yongin-si, South Korea

Young Hwan Park