Lg Electronics Inc.

Samsung Electro-mechanics Co., Ltd.

Sn Bioscience Inc.

Utah-inha Dds & Advanced Therapeutics Research Center

Snu Rdb Foundation

Goldstar Electron Co., Ltd.

Utah-inha Dds & Advanced Therapeutics Research Cen

Nextbiomedical Co., Ltd.

Young Hwan Park

Ki Yeol Park

Woo Chul Jeon

Si Moon Jeon

Jung Hee Lee

Jae Won Chang

Yong Jin Choi

Tae Hee Lee

Na Eun Kim

Jin Woong Kim

Kyung Seop Hong

Seong Ho Kim

Dong Won Kim

Joon Ho Pyo

Dae Yun Park

Gap Su Shin

Kyung Hwan Kim

Oh H Kwon

Nung Seo Park

Mu Yong Choi

Don Haeng Lee

Seok Yoon Hong

Jung Youp Han

Il Hyun Lee

Jun Seok Lee

Byung Keol Choi

Sang Heon Yoon

Soon Jo Lee

Choon Myun Chung

Hwan Joo Myung

Young Jin Doh

Soo Won Park

Hyoun Jin Kim

Eunhye Lee

Yong Chul Kim

Keun Su Kim

Yang Hoon Chung

Jun-ho Lee

Jae Chul Lee

Sog Kie Hong

Dae Yeong Han

Jeong-Tae Kim

Moon Kee Chung

Se Yoon Kim

Dong Beom Lee

Joon Woo Kim

Dae Hee Youn

Kang H Sung

Chang W Hur

Tae Ik Kang

Yixian Li

Kyung Hwa Park

Hyun Jeung Kim

In Cheol Jeong

Hyo Seon Jang

Yog Jin Choi

Yong Youp Han

Woo Cul Jeon

Chang Seok Ki

Sook Young Park

Hae Yoong Chung

Jin Hee Maeng

Jin Woog Kim

Na Eun 103-1105 Woosung 1-Cha Apt Kim

Jae Won 1210-1301 Hanyang Mokryeon Apt 1088 Chang

A drug delivery system having an inner core-shell like structure containing a poorly soluble camptothecin compound and a water-soluble camptothecin compound, and an outer amphiphilic polymer shell surrounding the inner core-shell like structure, a manufacturing method therefor, and uses of the drug delivery system in treating cancer are disclosed. The core-shell structured particles form very stable particles and show a mono-distribution of particles before and after freeze-drying. The particles show excellent results compared with existing particles which do not contain the inner core-shell like structure, in animal efficacy tests and pharmacokinetic tests.

Particle and pharmaceutical composition comprising an insoluble camptothecin compound with double core-shell structure and method for manufacturing the same

The present invention relates to a drug delivery system having a double core-shell structure and, specifically, to a double nano-drug delivery system having an inner core-shell containing a poorly soluble camptothecin compound and a water-soluble camptothecin compound inside and an amphiphilic polymer shell, and to a manufacturing method therefor. The double core-shell structured particles manufactured by the present invention form very stable particles and show a mono-distribution of particles before and after freeze-drying. The particles of the present invention show excellent results compared with existing monolayer micelles in animal efficacy tests and pharmacokinetic tests, and do not use a surfactant causing hypersensitivity, and thus the use of the particles of the present invention can provide a pharmaceutical composition or a drug delivery system platform, which are safe for the human body.

The present invention provides: a composition for transarterial chemoembolization, comprising two types of biodegradable microbeads having different anticancer drug release characteristics; and a preparation method therefor. According to the present invention, a composition for transarterial chemoembolization exhibiting a desired anticancer drug release characteristic can be effectively prepared by controlling the mixing ratio of first and second biodegradable microbeads. Therefore, the present invention can be usefully applied to the transarterial chemoembolization of liver cancer.

Composition for transarterial chemoembolization, comprising first and second biodegradable microbeads, and preparation method therefor

The present invention provides a biodegradable medical adhesive or a sealant composition containing an oxidized glycosaminoglycan and a polyamine. The composition of the present invention exhibits improved effects in biodegradation, coating property, gelation time, hemostatic capacity, adhesive force, moisture absorptive capacity and the like, and thus can be applied to various medical uses in which a medical adhesive or sealant can be used, such as biotissue adhesion, filling, coating, adhesion prevention, wound covering, leakage prevention and hemostasis.

Biodegradable medical adhesive or sealant composition

The present invention provides administrable microparticles in vivo through a medical conduit, a composition comprising the same, and a manufacturing method therefor. The microparticles of the present invention have an advantage that a clogging phenomenon does not occur for an endoscopic administration through a spray apparatus.

Administrable microparticles in vivo through medical conduit

A dish washer is provided that includes a tub that defines a space for washing dishes, a water supply unit that has a water chamber where water supplied from the outside collects, to wash the dishes, a sump that is supplied with water from the water chamber and supplies wash water into the tub, and a heat exchange passage through which the wash water in the sump flows and exchanges heat with the water in the water chamber while flowing.

Dish washer having a heat exchange passage

The present invention relates to a silk nanofiber nerve conduit characterized in that fibroin nanofibers having a diameter of 200 to 400 nm, originated from silk fiber, are stacked layer upon layer to form a porous conduit-shape; and a method for producing thereof, more specifically, to a method for producing a silk nanofiber nerve conduit comprising: (Step 1) preparing a fibrous spinning solution; (Step 2) producing a silk nanofiber of conduit-shape by electrospinning the fibrous spinning solution prepared in step 1 into the cylindrical collecting part coated with polyethyleneoxide; and (Step 3) separating a silk nanofiber of conduit-shape produced in step 2 from the collecting part. The silk nanofiber nerve conduit of the present invention has excellent biocompatibility; allows the body fluid to be exchanged inter in and out of conduit through pores of the conduit, as well; has a proper elasticity, tensile strength, and tear strength. Due to these properties, the silk nanofiber nerve conduit of the present invention helps the regeneration of the nerve injury to recover a motor skill and a sensory function, and thus shows an excellent effect of nerve regeneration. Therefore, the silk nanofiber nerve conduit of the present invention can be used in treating a nerve injury instead of an existing synthetic polymeric nerve conduit.

Methods for producing and using silk nanofiber nerve conduits

Dishwashers and methods of control for operation of dishwashers are disclosed. The dishwasher may include an upper rack in an upper portion of a washing compartment for placing dishes, such as wine glasses, which are susceptible to damage. The dishwasher may also include an upper spraying arm in the upper portion of the washing compartment. During a wash cycle, the upper spraying arm can spray washing water toward the upper rack and steam may be supplied to the washing compartment at various intervals to reduce the risk of damage to the dishes and improve foreign matter removal. During a rinse cycle, water which may be heated in multiple stages by a sump heater may be sprayed toward the upper rack.

Controlling method of dishwasher

A semiconductor device including a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) generated within the semiconductor layer; a plurality of first ohmic electrodes which are disposed on the central region of the semiconductor layer and have island-shaped cross sections; a second ohmic electrode which is disposed on edge regions of the semiconductor layer; and a Schottky electrode part has first bonding portions bonded to the first ohmic electrodes, and a second bonding portion bonded to the semiconductor layer. A depletion region is provided to be spaced apart from the 2DEG when the semiconductor device is driven at an on-voltage and is provided to be expanded to the 2DEG when the semiconductor device is driven at an off-voltage, the depletion region being generated within the semiconductor layer by bonding the semiconductor layer and the second bonding portion.

Semiconductor device having schottky diode structure

Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.

Semicondutor device

A method for manufacturing a semiconductor device includes preparing a base substrate; forming a semiconductor layer on the base substrate; forming an ohmic electrode part having ohmic electrode lines, on the semiconductor layer; and forming a Schottky electrode part, which is disposed on the semiconductor layer to be spaced apart from the ohmic electrode lines and has Schottky electrode lines parallel to the ohmic electrode lines, wherein forming the ohmic electrode part further comprises forming an ohmic electrode plate connected to one end of the ohmic electrode lines, forming the Schottky electrode part further comprises forming a Schottky electrode plate connected one end of the Schottky electrode lines, and one line of the Schottky electrode lines is disposed between two of the ohmic electrode lines to thereby achieve an interdigited configuration in which the ohmic electrode part and the Schottky electrode part are formed.

2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same

The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a plurality of p-type nitride semiconductor segments formed on the nitride semiconductor layer and each formed lengthways from a first sidewall thereof, which is spaced apart from the source electrode, to a drain side; and a gate electrode formed to be close to the source electrode and in contact with the nitride semiconductor layer between the plurality of p-type semiconductor segments and portions of the p-type semiconductor segments extending in the direction of a source-side sidewall of the gate electrode aligned with the first sidewalls of the p-type nitride semiconductor segments is provided.

Nitride semiconductor device and manufacturing method thereof

Disclosed herein is a nitride based semiconductor device, including: a substrate; a nitride based semiconductor layer having a lower nitride based semiconductor layer and an upper nitride based semiconductor layer on the substrate; an isolation area including an interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer; and drain electrodes, source electrode, and gate electrodes formed on the upper nitride based semiconductor layer. According to preferred embodiments of the present invention, in the nitride based semiconductor device, by using the isolation area including the interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer, problems of parasitic capacitance and leakage current are solved, and as a result, a switching speed can be improved through a gate pad.

Nitride based semiconductor device and manufacturing method thereof

There are provided a semiconductor device and a method for manufacturing the same. The semiconductor device according to the present invention includes a base substrate; a semiconductor layer that includes a receiving groove and a protrusion part formed on the base substrate, a first carrier injection layer and at least two insulating layers formed to traverse the first carrier injection layer formed in the semiconductor layer, and a second carrier injection layer spaced apart from the first carrier injection layer formed on the protrusion part; a source electrode and a drain electrode that are disposed to be spaced apart from each other on the semiconductor layer; and a gate electrode that is insulated from the source electrode and the drain electrode and has a recess part recessed into the receiving groove, wherein the lowest end portion of the receiving groove contacts the uppermost layer of the first carrier injection layer and the insulating pattern disposed at the innermost side of the semiconductor layer among the insulating patterns traverses the entire layer forming the first carrier injection layer and is disposed at the outer side of both side end portions in the thickness direction of the receiving groove.

Semiconductor device and method for manufacturing the same

Growing community of inventors

Seoul, South Korea

Young Hwan Park