Samsung Electronics Co., Ltd.

Snow Corporation

Huvitz Co., Ltd.

Young-Hun Kim

Jae-Seok Yang

Jae Seok Yang

Hae-wang Lee

Hae Wang Lee

Young-chan Kim

Ju-Youn Kim

Seung-Ho Nam

Jaeseok Yang

Sihong Kim

Haewang Lee

SangCheol Jeon

Dookyung Ahn

Seong-mo Hwang

Jong-Ho Lee

Hong-seok Lee

Ju Youn Kim

Jong-Mil Youn

Jae-Hwan Lee

In-Chul Jeong

Dong-Hak Shin

Jin-seok Kwak

Koung-min Ryu

Myung-Jin Lee

Goan-Soo Seong

Kwan-Young Chun

Gan-soo Seoung

Pan-Jae Park

In-jung Ha

In-joong Ha

Jonghwa Won

Yunseob Song

Hyun-A Jang

Wangseup Yeum

Gyu-Hyun Lim

Inchul Jeong

A semiconductor device is provided. The semiconductor device comprising a first fin pattern and a second fin pattern which are separated by a first isolation trench and extend in a first direction, a third fin pattern which is spaced apart from the first fin pattern in a second direction intersecting the first direction and extends in the first direction, a fourth fin pattern which is separated from the third fin pattern by a second isolation trench, a first gate structure which intersects the first fin pattern and has a portion extending along an upper surface of the first fin pattern, a second gate structure which intersects the second fin pattern and has a portion extending along an upper surface of the second fin pattern and a first element isolation structure which fills the second isolation trench and faces a short side of the first gate structure.

Semiconductor device

A semiconductor device includes a substrate having cell areas and power areas that are alternately arranged in a second direction. Gate structures extend in the second direction. The gate structures are spaced apart from each other in a first direction perpendicular to the second direction. Junction layers are arranged at both sides of each gate structure. The junction layers are arranged in the second direction such that each of the junction layer has a flat portion that is proximate to the power area. Cutting patterns are arranged in the power areas. The cutting patterns extend in the first direction such that each of the gate structures and each of the junction layers in neighboring cell areas are separated from each other by the cutting pattern.

Semiconductor device and method of manufacturing the same

Sensor terminal for detecting golfer swing motion

A semiconductor memory device includes a memory core that performs reading and writing of data, data delivery and training blocks that are connected between first pads and the memory core, and at least one data delivery, clock generation and training block that is connected between at least one second pad and the memory core. In a first training operation, the data delivery and training blocks output first training data, received through the first pads, through the first pads as second training data. In a second training operation, at least one of the data delivery and training blocks outputs third training data, received through the at least one second pad, through at least one of the first pads as fourth training data. The second training data and the fourth training data are output in synchronization with read data strobe signals output through the at least one second pad.

Semiconductor memory devices, memory systems including semiconductor memory devices, and operating methods of semiconductor memory devices

Disclosed are semiconductor devices and methods of fabricating the same. The method comprises sequentially stacking a lower sacrificial layer and an upper sacrificial layer on a substrate, patterning the upper sacrificial layer to form a first upper sacrificial pattern and a second upper sacrificial pattern, forming a first upper spacer and a second upper spacer on sidewalls of the first upper sacrificial pattern and a second upper sacrificial pattern, respectively, using the first and second upper spacers as an etching mask to pattern the lower sacrificial layer to form a plurality of lower sacrificial patterns, forming a plurality of lower spacers on sidewalls of the lower sacrificial patterns, and using the lower spacers as an etching mask to pattern the substrate. The first and second upper spacers are connected to each other.

Semiconductor device and method of fabricating the same

A semiconductor device is provided including a substrate, a first gate structure, a first contact plug and a power rail. The substrate includes first and second cell regions extending in a first direction, and a power rail region connected to each of opposite ends of the first and second cell regions in a second direction. The first gate structure extends in the second direction from a boundary area between the first and second cell regions to the power rail region. The first contact plug is formed on the power rail region, and contacts an upper surface of the first gate structure. The power rail extends in the first direction on the power rail region, and is electrically connected to the first contact plug. The power rail supplies a turn-off signal to the first gate structure through the first contact plug to electrically insulate the first and second cell regions.

Semiconductor devices having power rails

An electronic circuit includes an output generator and an over-voltage detector. The output generator is configured to output an output signal to an output terminal. In response to an amplitude of a voltage of the output terminal being greater than an allowable amplitude, the over-voltage detector is configured to output an over-voltage detection signal of a first logic value, such that elements included in the output generator are turned off. In response to the over-voltage detector outputting the over-voltage detection signal of the first logic value again before a reference time elapses after the first logic value of the over-voltage detection signal changes to a second logic value of the over-voltage detection signal, the turned-off elements remain turned off. In response to the over-voltage detector outputting the over-voltage detection signal of the second logic value during the reference time, the turned-off elements are turned on.

Electronic circuit for protecting element from over-voltage and electronic device including the same

Provided is a method and system for recommending an optimal position of photographing. A optimal position-of-photographing recommendation method may include executing, at an electronic device, and controlling a camera included in the electronic device under control of a photography application executed on the electronic device; calculating, at the electronic device, a photograph angle of the electronic device based on sensor information provided from a sensor of the electronic device under control of the photography application; comparing, at the electronic device, the calculated photograph angle to a desired angle range that is managed by the photography application, under control of the photography application; and outputting, at the electronic device, notification data in response to the calculated photograph angle being included in the desired angle range, under control of the photography application.

Method and system for recommending optimum position of photography

An electronic circuit includes a peak detector, a gain controller, and a compressor. The peak detector detects a peak level from a digital input. The gain controller outputs a digital gain with regard to increasing the peak level to a target level, The compressor provides the gain controller with a compressed gain which is to be output as the digital gain, based on the detected peak level. In a compression interval where the peak level is greater than a threshold level, the output digital gain increases as the peak level decreases. The compressor generates the compressed gain such that a ratio of an increment of the output digital gain to a decrement of the peak level in the compression interval is less than a reference ratio.

Electronic circuit performing gain control and gain compression to improve characteristic of analog output and electronic device including the same

Growing community of inventors

Seoul, South Korea

Young-Hun Kim