Skhynix Inc.

Samsung Electronics Co., Ltd.

Young-Hun Choi

Hyun-Ho Kim

Sang-Hyun Lee

Eun-Young Kim

Ji-Won Kim

Sang-eun Lee

Jung-hyun Choi

Kyoung-oh Choi

Yun-Hui Yang

Bok-Young Lee

Sung-woo Kang

Young-Mook Oh

Byeong-Jin Kim

In-Keun Lee

Jeong-Hyun Park

Hak-yoon Ahn

Jong-Hee Han

Seong-han Oh

Sung-Bo Hwang

Young-Joong Noh

Young-Ran Han

Dai-Boong Lee

Min-Chul Jung

Ju-Hyun Choe

Jae-Kwang Lee

Seung-Sin Lee

A semiconductor device includes an active region in a shape of a fin extending in a first direction, the fin having source/drain regions spaced apart therein, gate structures crossing the fin between the source/drain regions, each including a gate electrode, a first contact structure in electrical contact with a first source/drain region, the first contact structure including a first lower contact and a first upper contact directly thereon, a second contact structure in electrical contact with a gate electrode of a gate structure, the second contact structure including a second lower contact and a second upper contact directly thereon, and a third contact structure in electrical contact with a gate electrode of a second gate structure and in electrical contact with a second source drain region, the third contact structure including a third lower contact and a third upper contact directly thereon.

Semiconductor device and method of manufacturing the same

A wafer level curved image sensor may include a substrate having a central region, a peripheral region, and an edge region, the peripheral region being formed between the central region and the edge region, supporting patterns formed over the substrate, first fixed patterns formed between the supporting patterns, and an image sensing chip formed over the supporting patterns. The supporting patterns and the first fixed patterns, in combination, form a planar lower surface and a concavely-curved upper surface. The image sensing chip has a curved lower surface and a curved upper surface.

Wafer level curved image sensors and method of fabricating the same

An image sensor having a lower device, an upper devise, and a TSV structure is provides. The lower device may include a lower substrate, a lower TSV pad, and a lower interlayer insulating layer. The lower TSV pad may be formed over the lower substrate. The lower interlayer insulating layer may cover the lower TSV pad. The upper device may include an upper substrate, an upper TSV pad, and an upper interlayer insulating layer. The upper TSV pad may be formed over the upper substrate. The upper interlayer insulating layer may cover the upper TSV pad. The TSV structure may vertically pass through the upper device and electrically connect the upper TSV pad to the lower TSV pad. The upper TSV pad may include an upper opening. The lower TSV pad may include a unit pad and a lower opening. The unit pad may be exposed through the upper opening and contacts the TSV structure in a top view.

Stacked type image sensors having a through silicon via structure

Growing community of inventors

Gyeonggi-do, South Korea

Young-Hun Choi