Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Young Hun Byun

Sang Yoon Lee

Soon Taik Hwang

Euk Che Hwang

Bon Won Koo

Yi Yeol Lyu

Jong Jin Park

Jin Sung Kim

Tae Woo Lee

Seok Mo Chang

Hae Jung Son

Jae Ho Lee

Eun Sung Lee

Won Cheol Jung

Sang Mock Lee

Hye Yeon Yang

Joon Sung Ryu

Jin Young Bae

In Koo Kang

Byong Ki Yun

Eun Mi Seo

Min Chul Chung

Tatsiana Kuzniatsova

Bon Won 106/903 Dongsuwon Lg Village Koo

An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01&#x2dc;10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness, and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.

Organometallic composition for forming a metal alloy pattern and a method of forming such a pattern using the composition

A metal organic precursor, including a metal-chelate complex including a chelate including a Groups 3 to 12 metal ion, a chelating ligand, and an anion bound to the chelate, wherein the chelating ligand forms a reducing compound and a volatile material at a temperature of about 160&#xb0; C. or lower, the anion forms a reducing compound and a volatile material at a temperature of about 180&#xb0; C. or lower, and the metal-chelate complex is represented by Formula I:[L1-Me][A]&#x2003;&#x2003;(I)wherein Me is the Groups 3 to 12 metal ion, L1 is the chelating ligand, A is the anion, n, m, p, and q are independently integers of 1 or more, n is the sum of a charge quantity of L1 and a charge quantity of Me, m is a charge quantity of A, and (n&#xd7;p)=(m&#xd7;q).

Metal organic precursor, a method of preparing the same, and a method of forming a conductive metal film or pattern

Provided are an organometallic precursor, wherein a carboxyhydrazide compound is coordinated to a central metal, and a metal film or pattern using the precursor. By using the organometallic precursor, highly pure metal films or patterns can be obtained through a simple low-temperature process.

Organometallic precursor for metal film or pattern and metal film or pattern using the precursor

A composition for preparing an organic insulator, the composition comprising (i) at least one organic-inorganic hybrid material; (ii) at least one organometallic compound and/or organic polymer; and (iii) at least one solvent for dissolving the above two components, so that an organic insulator using the same has a low threshold voltage and driving voltage, and high charge carrier mobility and I/Iratio, thereby enhancing insulator characteristics. Further, the preparation of organic insulating film can be carried out by wet process, so that simplification of the process and cut of cost are achieved.

Composition for preparing organic insulator

An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01&#x2dc;10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.

A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

Method of fabricating thin film transistor

Disclosed is a polymeric surfactant for high dielectric polymer composites, a method of preparing the same, and a high dielectric polymer composite including the same. The polymeric surfactant for high dielectric polymer composites, which includes a head portion having high affinity for a conductive material and a tail portion having high affinity for a polymer resin, forms a passivation layer surrounding the conductive material in the high dielectric polymer composite including the polymeric surfactant, thus ensuring and controlling a high dielectric constant.

Polymeric surfactant for high dielectric polymer composites, method of preparing the same and high dielectric polymer composite comprising the same

A composition of (i) an organometallic precursor containing a hydrazine compound coordinating with a central metal thereof and (ii) an organometallic compound of a main group metal and a method of forming metal film or pattern using this composition.

Organometallic precursor composition and method of forming metal film or pattern using the same

A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, thus all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

A rapid and efficient process of forming a metal-containing pattern by producing, through photoreaction, a difference in solubility between exposed and unexposed areas of a thing film, and developing the film to produce a patterned film, followed by oxidation or reduction to provide a pure metal or metal oxide pattern.

Process of forming a micro-pattern of a metal or a metal oxide

An organometallic precursor mixture for forming a metal alloy pattern and a method of forming the metal alloy pattern using the same, wherein the metal alloy pattern having improved adhesive force to a substrate, heat resistance, and resistance to atmospheric corrosion can be readily formed using the organometallic precursor mixture by and exposing step without using a separate photosensitive resin.

Organometallic precursor mixture for forming metal alloy pattern and method of forming metal alloy pattern using the same

An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high I/I, and it can be prepared by a wet process.

Organic thin film transistor comprising multi-layered gate insulator

An organic metal precursors containing one or more organic ligands bonded to one or more metal atoms, wherein the organic ligand is rapidly dissociated from the metal atom upon exposure to light and degraded leaving a metal or a metal oxide. By using the organic metal precursors, an electroconductive, metal-containing patterned film can be easily deposited on a substrate at room temperature under atmospheric pressure without using photosensitive resins.

Organic metal precursor for use in forming metal containing patterned films

An organometallic precursor for forming a metal pattern and a method of forming the metal pattern using the same, in which an electrically conductive metal pattern is formed using an organometallic precursor, through an exposing step without using a separate photosensitive resin. The exposure time required to dissociate the organic ligands from the metals of the organometallic precursor is very short making the overall patterning process very efficient.

Growing community of inventors

Daejeon-Shi, South Korea

Young Hun Byun