Samsung Electronics Co., Ltd.

Cj Cheiljedang Corporation

Conversant Intellectual Property Management Incorporated

Young-hoon Park

Chi-hoon Lee

So-Young Kim

Hyo-dong Ban

Eun-young Minn

Kwang-myung Cho

Hyo-Jin Kim

Jin-ho Lee

Hyang Choi

Jong-Soo Choi

Sang-Jo Lim

Yong-Uk Shin

Jin-Sook Chang

Kyung-oh Choi

Jun-Ok Moon

Jin-nam Lee

Myoung-hee Han

Hee-jong Lee

Hye-won Um

Hyun-min Koo

Young-lyeol Yang

Sung-hoon Kho

Chang-hyun Jin

Ji-sun Lee

Eun-sung Koh

Jae-yeong Ju

Young-wook Cho

Jeong-Ho Lee

Sang-il Jung

Jae-Ho Song

Jun-Seok Yang

Yong-hee Lee

Kyung-seok Oh

Young-woo Seo

Won-Je Park

Min-young Jung

Jae-Woo Jang

Yang-koo Lee

An-Chul Shin

Sun-Young Lee

Kwang-myung Choi

Eun-Young Minn

Chi-Hoon Lee

Hyo-Dong Ban

An integrated circuit chip having an anti-moisture-absorption film at the edge thereof and a method of forming the anti-moisture-absorption film are provided. In the integrated circuit chip which has predetermined devices inside and whose uppermost layer is covered with a passivation film, a trench is formed by etching interlayer dielectric films to a predetermined depth along the perimeter of the integrated circuit chip to be adjacent to the edge of the integrated circuit chip and an anti-moisture-absorption film is formed to fill the trench or is formed on the sidewall of the trench to a predetermined thickness, in order to prevent moisture from seeping into the edge of the integrated circuit chip. Moisture is effectively prevented from seeping into the edge of the chip by forming the anti-moisture-absorption film at the edge of the chip using the conventional processes of manufacturing the integrated circuit chip without an additional process.

Integrated circuit chip having anti-moisture-absorption film at edge thereof and method of forming anti-moisture-absorption film

The present invention relates to a method for producing L-methionine, comprising: i) culturing an L-methionine precursor-producing microorganism strain in a fermentation solution, so that the L-methionine precursor accumulates in the solution; and ii) mixing a converting enzyme and methylmercaptan or its salts with at least a portion of the solution to convert the accumulated L-methionine precursor into L-methionine, as well as to microorganism strains used in each step.

Microorganism producing L-methionine precursor and method of producing L-methionine and organic acid from the L-methionine precursor

The present invention relates to a microorganism having L-tryptophan productivity and a method for producing L-tryptophan using the same. More precisely, the present invention relates to the recombinantstrain CJ600 (KCCM 10812P) having tryptophan productivity produced from the mutant form (KFCC 10066) ofhaving L-phenylalanine productivity, wherein tryptophan auxotrophy is released, L-phenylalanine biosynthesis is blocked but tryptophan productivity is enhanced by reinforcing the gene involved in tryptophan biosynthesis, and a method of producing L-tryptophan using the same.

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The present invention relates to a method for producing L-methionine and organic acid comprising the following steps: Step 1) preparing a strain producing L-methionine precursor and producing L-methionine precursor by the fermentation of the strain; Step 2) producing L-methionine and organic acid by the enzyme reaction process with the L-methionine precursor as a substrate, and microorganism strains used in each step.

The present invention relates to a microorganism producing inosine, which is one of purine nucleoside, an important material for 5'-inosinic acid synthesis, and method for producing inosine using the same. More particularly, the present invention relates to a recombinant microorganism ofgenus producing inosine at high concentration by inactivating the gene encoding nucleoside hydrolase II and by enhancing the expression of the gene encoding 5&#x2032;-nucleotidase, which still retains the characteristics ofCJIP2401 (KCCM-10610).

Microorganism producing inosine and method of producing inosine using the same

The present invention relates to a microorganism ofgenus having enhanced L-lysine productivity and a method of producing L-lysine using the same. More particularly, the present invention relates to a recombinant microorganism ofgenus having enhanced L-lysine productivity by inactivating endogenous NCgl2534 gene having the amino acid sequence containing repeated lysine residues and a method of producing L-lysine using the same.

The present invention relates to a microorganism ofgenus having enhanced L-lysine productivity and a method of producing L-lysine using the same. More particularly, the present invention relates to a recombinant microorganism ofgenus having enhanced L-lysine productivity by inactivating endogenous NCgI 1090 gene having the amino acid sequence containing repeated aspartate residues and a method of producing L-lysine using the same.

A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.

Method of fabricating image sensor

Provided are methods of fabricating an image sensor. Embodiments of such methods can include forming a first gate insulation layer in a first region of a semiconductor substrate and a first gate electrode layer, to cover the first gate insulation layer and forming a second gate insulation layer within a nitrogen enhanced atmosphere and a second gate electrode layer in a second region of the semiconductor substrate. The methods also include patterning the first gate electrode layer and the first gate insulation layer of the first region to form a first gate pattern and patterning the second gate electrode layer and the second gate insulation layer of the second region to form a second gate pattern.

Methods of fabricating an image sensor

A fuse area structure in a semiconductor device and a method of forming the same are provided. The fuse area structure includes a protection film formed of a passivation film for preventing moisture from seeping into the sidewall of an exposed fuse opening. In order to form the protection film, an etching stop film is formed on a fuse line, and the fuse opening is formed at the same time using the etching stop film when a contact hole required for the semiconductor device is formed. A conductive material layer for forming an upper interconnection layer is formed on the entire surface of a resultant structure on which the contact hole and the fuse opening are formed. The conductive material layer formed on the fuse opening is removed. The exposed etching stop film is removed. Finally, the fuse area is completed by forming a passivation film on the entire surface of the resultant structure and removing the passivation film formed on the bottom of the fuse opening into which laser is to be irradiated. Moisture is effectively prevented from seeping into the interfaces between interlayer dielectric films since the protection film of the passivation film is formed on the sidewall of the fuse opening without an additional process. Also, an additional photolithography process for forming the fuse opening is not necessary since the fuse opening is simultaneously formed when the contact hole is formed.

Fuse area structure including protection film on sidewall of fuse opening in semiconductor device and method of forming the same

A fuse area structure in a semiconductor device and a method of forming the same are provided. A ring-shaped guard ring which surrounds a fuse opening, for preventing moisture from seeping into the side surface of the exposed fuse opening, is included. The guard ring is integrally formed with a passivation film. In order to form the guard ring, a guard ring opening etching stop film is formed on a fuse line. A guard ring opening is formed using the etching stop film, and a contact hole is formed in a peripheral circuit. A conductive material layer for forming an upper interconnection layer is formed on the entire surface of a resultant structure on which the contact hole and the guard ring opening are formed. The conductive material layer formed on the guard ring opening is removed. The exposed etching stop film is removed. Finally, a passivation film is deposited on the entire surface of the resulting structure. Accordingly, the guard ring formed of the passivation film filling the guard ring opening is formed. It is possible to form the guard ring without an additional process, to thus effectively prevent moisture from seeping into interfaces between interlayer dielectric films. Also, an additional photolithography process for forming the guard ring is not necessary since the guard ring opening and the contact hole in the peripheral circuit are simultaneously formed.

Fuse area structure having guard ring surrounding fuse opening in semiconductor device and method of forming the same

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Gyeonggi-do, South Korea

Young-hoon Park