Samsung Electronics Co., Ltd.

Young-Hoon Oh

Woo-Yeong Cho

Du-Eung Kim

Dae-seok Byeon

Young-Don Choi

Yong-Kyu Lee

Hyun-Kook Park

Hyo-Jin Kwon

Ick-Hyun Song

A memory device and a method of operating the memory device are provided for performing a read-retry operation. The method of operating the memory device includes starting a read-retry mode, reading data of multiple cell regions using different read conditions, and setting a final read condition for the cell regions according to results of data determination operations on data read from the cell regions.

Method of operating memory device using different read conditions

The present inventive concept provides a driving method of memory controller controlling nonvolatile memory device using variable resistive element. The memory controller may control a plurality of first memory devices and a second memory device. A number of write drivers in the second memory device may be driven when a number of first memory devices among the plurality of first memory devices are used. A different number of write drivers in the second memory device may be driven when a different number of first memory devices among the plurality of first memory devices are used.

Non-volatile memory device, driving method of memory controller controlling the non-volatile memory device and memory system including the memory controller and the non-volatile memory device

A circuit for generating a write signal includes a pre-emphasis signal generator that receives location information of a to-be-programmed memory cell and generates a pre-emphasis signal depending on the location information of the to-be-programmed memory cell, and a write driver that generates a program signal corresponding to data to be programmed in the to-be-programmed memory cell. A write signal is generated by combining the program signal with the pre-emphasis signal supplied from the pre-emphasis signal generator, and the write signal output to the to-be-programmed memory cell.

Circuit for generating write signal, variable resistance memory device, and method for programming variable resistance memory

Growing community of inventors

Hwaseong-si, South Korea

Young-Hoon Oh