Samsung Electronics Co., Ltd.

Young Hoon Oh

Yong Jun Lee

Chea Ouk Lim

Hyun Kook Park

Chi Weon Yoon

Jung Sunwoo

Young Don Choi

Ick Hyun Song

A resistive memory element or device includes: a first, main, memory cell area including a plurality of first resistive memory cells; and a second, buffer, memory cell area including a plurality of second resistive memory cells. The first resistive memory cells of the main memory cell area are configured to store data therein, and the second resistive memory cells of the buffer memory cell area are configured to temporarily store portions of the data therein for at least a stabilization time period while the portions of the data stabilize in the main memory cell area.

Memory device comprising resistance change material and method for driving the same

A memory device having a resistance change material and an operating method of the memory device are provided. A memory device includes a memory cell array including first and second resistive memory cells, which store different data according to the change of their resistance; a buffer including first and second storage regions corresponding to the first and second resistive memory cells, respectively; and a control circuit receiving program data to be programmed to the memory cell array, comparing first data stored in the first storage region and second data stored in the first resistive memory cell, and as a result of the comparison determining one of the first and second storage regions as a storage region to which to write the program data.

Memory device having resistance change material and operating method for the memory device

A resistive memory device includes a plurality of first switches that connect word lines to a ground line in response a first switch control signal and a plurality of second switches that connect a plurality of global bit lines to a plurality of local bit lines corresponding to the plurality of global bit lines in response to a second switch control signal.

Resistive memory device capable of blocking a current flowing through a memory cell for fast quenching

Growing community of inventors

Hwaseong-si, South Korea

Young Hoon Oh