Samsung Electronics Co., Ltd.

Semes Co., Ltd.

Young-Hoo Kim

Kuntack Lee

Jung-Min Oh

Hyo-San Lee

Hyosan Lee

Kun-Tack Lee

Jihoon Jeong

Yong-Jhin Cho

Tae-Hong Kim

Kun Tack Lee

Ji-Hoon Cha

Seung Min Shin

Ji Hoon Cha

Hun Jae Jang

Bo-un Yoon

Yong-Sun Ko

Boun Yoon

Seok Hoon Kim

Sangjine Park

Yong-Jun Choi

Sang Won Bae

In-Gi Kim

Yong Jun Choi

Dae-Hyuk Kang

Changki Hong

Yungjun Kim

In Gi Kim

Imsoo Park

Il-Sang Lee

Youngok Kim

Jin-Woo Lee

Sung-Jun Kim

Woo-Gwan Shim

Hae-Won Choi

Seok-Hoon Kim

Ingi Kim

Daehong Eom

Im-Soo Park

Seung-Min Shin

Seohyun Kim

Sung Hyun Park

Seo Hyun Kim

Kyoung Hwan Kim

Sung-Hyun Park

Sang Jine Park

Mihyun Park

Chang-Gil Ryu

Jaedong Lee

Sang-Won Bae

Daehyuk Kang

Ji Hoon Jeong

Ui-soon Park

Jinwoo Lee

Chang-ki Hong

Donghyun Kim

Young Chan Kim

Min Hee Cho

Jeong-Nam Han

Sang-Jine Park

Jung-Won Lee

Jae-Dong Lee

Ji Hwan Park

Kihoon Choi

Byung-Hong Chung

Kun-tack Lee

Sunghyun Park

Byung-Kwon Cho

Jaeseong Lee

Anton Koriakin

Ji-Hoon Jeong

Hyun Kyu Park

Jeongnam Han

Jeong-lim Nam

Sukhoon Kim

Chawon Koh

Kyoung-hwan Kim

Keonyoung Kim

Yeon-Jin Gil

Hyo San Lee

Ye Rim Yeon

Ji Soo Jeong

Soo Young Choi

Tae Keun Kim

Sang-won Bae

Mi Hyun Park

Dae-Hong Eom

Seung Ho Kim

Hyun Woo Nho

Hae Rim Oh

An apparatus for processing a substrate includes a process chamber; a support which is placed inside the process chamber and supports the substrate; a fluid supplier which supplies fluid into the process chamber; and a controller configured to perform a compressing step to bring the fluid into a supercritical phase inside the process chamber, in which the compressing step includes a continuous first section and second section, the fluid supplier includes a first portion and a second portion, and the controller supplies the fluid into the process chamber at a first speed during the first section using the first portion, and supplies the fluid into the process chamber at a second speed higher than the first speed during the second section using the second portion.

Apparatus and method for processing substrate

A wafer drying apparatus is disclosed. The wafer drying apparatus may include a drying chamber housing providing a drying space, in which a wafer is disposed, a supercritical fluid supplying part configured to supply a supercritical fluid into the drying space, a wafer heating part configured to heat the wafer disposed in the drying space, and a wafer cooling part configured to cool the wafer disposed in the drying space. The wafer cooling part may include a cooling plate disposed below a place, on which the wafer is loaded, and a cooling conduit inserted in the cooling plate.

Wafer drying apparatus, wafer processing system including the same, and wafer processing method using the same

A substrate drying apparatus includes; a drying chamber configured to load a substrate and including a lower chamber and an upper chamber above the lower chamber, a supply port configured to supply a supercritical fluid into the drying chamber and including a main supply port and a sub-supply port horizontally spaced apart from the main supply port, wherein the main supply port penetrates a center portion of the upper chamber, and a first buffer member coupled to the upper chamber, vertically separated from the sub-supply port, and vertically overlapping the sub-supply port, such that supercritical fluid vertically introduced into the drying chamber through the sub-supply port is impeded by the first buffer member to change a flow direction for the supercritical fluid.

Substrate drying apparatus and semiconductor device manufacturing method using same

A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

Substrate processing apparatus and substrate processing method

In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.

Substrate processing method and substrate processing system

A wafer cleaning method is provided. The wafer cleaning method includes providing a wafer on a stage that is inside of a chamber. The wafer is fixed to the stage by moving a grip pin connected to an edge of the stage. First ultrapure water is supplied onto the wafer while the wafer is rotating at a first rotation speed. The grip pin is released from the wafer by moving the grip pin. A development process is performed by supplying liquid chemical onto the wafer while the wafer is rotating at a second rotation speed that is less than the first rotation speed.

Wafer cleaning apparatus and wafer cleaning method using the same

A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.

Dry cleaning apparatus and dry cleaning method

A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

Multi-chamber apparatus

A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

Process chamber and substrate processing apparatus including the same

Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.

Substrate drying method, photoresist developing method, photolithography method including the same, and substrate drying system

A cleaning composition, a cleaning apparatus, and a method of fabricating a semiconductor device, the cleaning composition including a surfactant; deionized water; and an organic compound, wherein the surfactant is included in the cleaning composition in a concentration of about 0.28 M to about 0.39 M or a mole fraction of about 0.01 to about 0.017, and wherein the organic compound is included in the cleaning composition in a concentration of about 7.1 M to about 7.5 M or a mole fraction of about 0.27 to about 0.35.

Cleaning composition, cleaning apparatus, and method of fabricating semiconductor device using the same

Growing community of inventors

Yongin-si, South Korea

Young-Hoo Kim