Samsung Electronics Co., Ltd.

Amorepacific Corporation

Samsung Display Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Other

Samsung Mobile Display Co., Ltd.

Ls Cable & System Ltd.

Ls Cable Ltd.

Pacific Corporation

Hyundai Electric & Energy Systems Co., Ltd.

Young-Ho Park

Ki-Wha Lee

Jin Kwan Kim

Byoung Young Woo

Kyung Min Lim

Yeon Su Jeong

Kwan-Hee Lee

Jin Kyu Choi

Song Seok Shin

Jae-Hyun Kwak

Kyung-Hoon Choi

Mi-Kyung Kim

Sun-Young Kim

Min-Seung Chun

Young-Ger Suh

Hee-Doo Kim

Hyeung-Geun Park

Young-Suck Choi

Tae-Shick Kim

Jung-Ha Son

Mie-Hwa Park

Seontaek Kim

Eun Ju Choi

Yonghwa Lee

Dong-Heon Kim

Uh Taek Oh

Joo Hyun Moh

Jesuk Yeon

Kyung-Sub Song

Hwan-Hee Cho

Chang-Woong Chu

Chanik Park

Yung Hyup Joo

Miyoung Park

Moon-Jae Lee

Hyun Ju Koh

Ji-Hyun Seo

Yoon-Jin Kim

Joo-Hyun Moh

Ho-Souk Cho

Choon-Woo Im

Sung-Il Kim

Jin-Ho Nam

Hyun-Ju Koh

Seol Rin Park

Yoo-Keun Won

Chang-Yong Lee

Kwang-Hyun Shin

Hee-Seong Jeong

Chan Kim

Sang Jun Lee

Mi Na Jang

Chan-Ik Park

Chul Ju Lee

Nam-wook Kang

Jeewoo Lee

Byoung Young Ahn

Hyun Jung Shin

Byung-Ki Lee

Shin Chung

Choon-Woo Lim

Seong-Il Kim

Wonkyung Cho

Joonho Choi

Jong Hwa Roh

Joon Ho Bae

Jung Bum Yi

In-Hwan Doh

Ju Pyung Lee

Young-Hee Kim

Seong-Jun Ahn

Sung-Kug Cho

Chang Soon Choi

Chang-Mo Ko

Gyeyoung Choi

Sungkug Cho

Kyoungmi Jung

Jihae Lee

Je-Kyeom Jeon

Min-Soo Noh

Seog-Ho Lim

Mi Young Park

Chae Wook Kim

Kyung Mi Joo

Yong-Hwa Lee

Chang Hoon Lee

Dae-Bang Seo

Jong-Sun Yun

Uhtaek Oh

Jun-Yong Ha

Min-soo Kim

Chi-Goo Kang

Seung-Pyo Ryu

Soo-Nam Kim

Son Tung Ha

Milovanovic Stefan

Min-cheol Kwon

Dujic Drazen

Mie-Hwan Park

Hyung-Chul Jang

A storage device includes a nonvolatile memory device; and a controller configured to, sequentially receive first read commands and a first write command, the first write command being associated with first write data, slice the first write command to generate a plurality of sub-commands, slice the first write data to generate a plurality of sub-data elements, and alternately transmit, to the nonvolatile memory device, at least one read command of the first read commands, and one sub-command of the plurality of sub-commands and one sub-data element of the plurality of sub-data elements.

Storage device including nonvolatile memory device and controller, controller and operating method of nonvolatile memory device

One aspect of the present disclosure is a pharmaceutical composition which includes (R)—N-[1-(3,5-difluoro-4-methansulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide as a first component and a cellulosic polymer as a second component, wherein the composition of one aspect of the present disclosure has a formulation characteristic in which crystal formation is delayed for a long time.

Pharmaceutical composition containing (R)-N-[1-(3,5-difluoro-4-methansulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide

The present invention relates to a composition containing a bean extract extracted by low-concentration, low-grade alcohol or fractions thereof. The composition exhibits excellent effects in improving blood circulation, improving obesity, and preventing diabetes, hyperlipidemia and the like, and exhibits the effects of alleviating or treating the symptoms of diabetes, hyperlipidemia, and the like. The present invention also relates to a method for improving blood circulation and vascular health.

Composition containing a bean extract for improving blood circulation and vascular health and method for improving blood circulation and vascular health

A light emitting device package includes a mounting substrate including first and second lower electrode portions separated by a first groove, first and second upper electrode portions separated by a second groove connected to the first groove and disposed on the first and second lower electrode portions respectively, and an insulation support member filling the first groove, a light emitting device mounted on the first and second upper electrode portions of the mounting substrate, a double phosphor film covering an upper surface of the light emitting device, including a phosphor layer and a barrier layer sequentially stacked on each other, and having a thickness of 200 &#x3bc;m or less, and a sealing member on the mounting substrate covering the light emitting device and the double phosphor film.

Light emitting device package and method of manufacturing light emitting device package

A data storage device includes a non-volatile memory, including a first region and a second region different from the first region, and a controller which stores first and second data in a first region of the non-volatile memory. The first region of the non-volatile memory includes first and second storage regions. A part of the first data is stored in the first storage region, and another part of the first data is stored in the second storage region. The second data is stored in the second storage region, and an offset value of the second storage region in which the second data is started is stored in the second region of the non-volatile memory.

Data storage device that stores multiple values corresponding to multiple keys in a page

A power converter having a Scott-T transformer includes a direct current to alternating current converter configured to have at least two multilevel converters converting input direct current power to alternating current power, a Scott-T transformer configured to operate in medium frequency of several hundreds of Hz to several tens of kHz, to transform a voltage level of the alternating current power from each of the at least two multilevel converters of the direct current to alternating current converter into three-phase alternating current power, and to output the three-phase alternating current power, and an alternating current to direct current converter configured to convert the three-phase alternating current power from the Scott-T transformer to direct current power.

Power conversion apparatus having Scott-T transformer

A storage device includes a controller that receives a value corresponding to data stored in a memory and a key to be referenced to identify the value from a host. In addition, the controller manages partial key-value mapping information indicating a correspondence relationship between a partial key and a value address, and returns information to the host in response to a host request. The information corresponds to a key that includes a same character as a character at a specific position of the received key. The controller to determine the information by determining a partial region of the memory that stores the data based on the partial key-value mapping information and performing a read operation on the partial region to obtain an entire key including the partial key.

Device for performing iterator operation in database

A method of operating a key-value storage device includes a key-value storage device receiving from a host a first command including a first key, a first value, and a first snapshot identification (ID), the key-value storage device generating a first snapshot entry including the first snapshot ID, the first key, and a first physical address in a non-volatile memory device at which the first value is written, in response to the received first command, receiving from the host a second command including the first key, a second value, and a second snapshot ID, and in response to the received second command, the key-value storage device generating a second snapshot entry including the second snapshot ID, the first key, and a second physical address in the non-volatile memory device at which the second value is written.

Key-value storage device supporting snapshot function and operating method thereof

Disclosed in the present specification is a method capable of preparing N-[4-[(1R)-1-[[(R)-(1,1-dimethylethyl)sulfinyl]amino]ethyl]-2,6-difluorophenyl]-methanesulfonamide (INT028-2) with high optical purity, through the selection of Ellman-chiral auxiliaries and the recrystallization and separation of optical isomers. According to the above method, high-purity N-[4-[(1R)-1-[[(R)-(1,1-dimethylethyl)sulfinyl]amino]ethyl]-2,6-difluorophenyl]-methanesulfonamide with excellent quality can be produced at room temperature by improving cryogenic process conditions necessary for realizing high optical purity, and thus the trimming due to the process failure rate can be remarkably reduced.

Method for preparing (R)-N-[4-(1-amino-ethyl)-2,6-difluoro-phenyl]-methanesulfonamide

The present specification relates to a chiral resolution method of a stereoisomer mixture, comprising a step of mixing a stereoisomer mixture of compounds, in which an amine group is bound to an asymmetric carbon atom, with a chiral auxiliary and salt-forming auxiliary compound, wherein the chiral auxiliary is an O,O'-diacyltartaric acid derivative, more specifically, a 2,3-dibenzoyl-tartaric acid or O,O&#x2032;-di-p-toluoyl tartaric acid, the salt-forming auxiliary compound is mandelic acid or camphorsulfonic acid, and an optical isomer having a high level of optical purity can be obtained by using the method. Therefore, according to one aspect of the present invention, the method can be useful in pharmaceutical or cosmetic field when preparing an optical isomer having a high optical purity.

Chiral resolution method of N-[4-(1-aminoethyl)-phenyl]-sulfonamide derivatives

A method of operating a nonvolatile memory system including a memory device having a plurality of memory blocks includes selecting a source block among the plurality of memory blocks in the nonvolatile memory system, and performing a reclaim operation for the source block based on the number of program and erase cycles which have been performed on the source block.

Method of operation for a nonvolatile memory system and method of operating a memory controller

An operation method of a nonvolatile memory system is provided. The method includes selecting a source block of memory blocks, performing a cell-counting with respect to the selected source block based on a reference voltage, and performing a reclaim operation on the source block based on the cell-counting result.

Operation method of nonvolatile memory system

A method of processing input/output (I/O) in a storage device includes adjusting a read anticipation time based on a change of a resource management status related to operations of the storage device and performing an I/O processing operation at the storage device based on the adjusted read anticipation time. The I/O processing operation is performed to postpone an operation regarding a program command and perform a read command at higher priority than a write command at the storage device in a period from completion of a read operation at the storage device until the read anticipation time has elapsed.

Method of processing input/output in storage device and storage device and non-volatile memory device using the method

Growing community of inventors

Seoul, South Korea

Young-Ho Park