Siltron, Inc.

Ls Cable & System Ltd.

Young-Ho Hong

Hyon-Jong Cho

Hong-Woo Lee

Seung-Ho Shin

Sung-Young Lee

Jae-Geon Lee

Ji-Hun Moon

Sin-Young Choi

Jae-Min Park

Dae-Yeon Kim

The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process.

Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot

The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm.

Semiconductor single crystal growth method having improvement in oxygen concentration characteristics

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Seoul, South Korea

Young-Ho Hong