Korea Institute of Science and Technology

Industry-University Cooperation Foundation Hanyang University

Young Ho Do

Ji Won Choi

Chong Yun Kang

Seok Jin Yoon

Jin Sang Kim

Seung Hyub Baek

Hyun Cheol Song

Jin Pyo Hong

June-Sik Kwak

Yoon Cheol Bae

Provided are a method of manufacturing a flexible piezoelectric energy harvesting device using a piezoelectric composite, and a flexible piezoelectric energy harvesting device manufactured by the same. The method of manufacturing the flexible piezoelectric energy harvesting device includes: forming a first electrode layer on a first flexible substrate; spin-coating a piezoelectric composite layer on the first electrode layer, wherein the piezoelectric composite layer is produced by mixing piezoelectric powder with polymer; performing heat treatment on the piezoelectric composite layer to harden the piezoelectric composite layer; and bonding a second flexible substrate with a second electrode layer on the hardened piezoelectric composite layer. Therefore, it is possible to simplify a manufacturing process and manufacture a high-performance flexible piezoelectric energy harvesting device having various sizes and patterns.

Method of manufacturing flexible piezoelectric energy harvesting device

Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed.

Method of fabricating oxide thin film device using laser lift-off and oxide thin film device fabricated by the same

Disclosed are a ReRAM, which is a non-volatile memory device, and a production method therefor. A resistance-variable layer, which varies the resistance in accordance with an applied pulse, has a multilayered structure comprising 3 oxide films. Each oxide film consists of an oxide film of the same type as the neighbouring oxide film(s), but the oxygen ratios in the compositions of neighbouring oxide films differ from each other.

Resistance-variable memory device and a production method therefor

Growing community of inventors

Seoul, South Korea

Young Ho Do