Samsung Electronics Co., Ltd.

Young Heub Jang

Jung Chak Ahn

Young Hwan Park

Jong Eun Park

Kundong Kim

Sungsu Kim

Hyungwook Kim

Sang Joo Lee

Hankook Cho

Jaehyuk Hur

Jiyun Bang

An image processing device includes an image sensor including a pixel array that includes a first pixel group, and a correlated double sampling circuit. The first pixel group includes a first plurality of normal pixels, a second plurality of normal pixels, and at least one first phase detection pixel. The correlated double sampling circuit is configured to generate first video data, based on charges of the first plurality of normal pixels, generate second video data, based on charges of the second plurality of normal pixels, and generate first phase detection data, based on an output of the at least one first phase detection pixel. The image processing device further includes an image signal processor configured to apply a first weight to the generated first video data, and apply a second weight to the generated second video data.

Image sensor configured to improve artifact in binning mode

In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.

CMOS image sensor for increasing conversion gain

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Suwon-si, South Korea

Young Heub Jang