Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Lg Electronics Inc.

Samsung Sds Co., Ltd.

Young-hee Lee

Jae-young Choi

Won-bong Choi

Jo-won Lee

Chan-ho Pak

Hyeon-jin Shin

Seon-mi Yoon

Jeong-Hee Lee

Kay-hyeok An

Eun-ju Ra

Sang-Wook Kim

Chang-seung Lee

David Seo

Seong-jun Park

Won-young Kim

Won-mook Choi

Eun-sung Kim

Seung-Hyun Hong

Young-jun Yun

Soo-min Kim

Hyeon-Jin Shin

Si-Young Lee

Hyung-Seok Kim

Gang-hee Han

Seung-hyun Baik

Young-Ho Choe

Yong-Woo Choi

Ho-Gyoung Kim

A graphene laminate including a substrate, a binder layer on the substrate, and graphene on the binder layer, wherein the graphene is bound to the substrate by the binder layer.

Graphene laminate and method of preparing the same

A graphene laminate includes a first piezoelectric material layer having a negatively-charged surface and a positively-charged surface, a first graphene layer under the first piezoelectric material layer, the first graphene layer contacting the positively-charged surface of the first piezoelectric material layer, a second graphene layer underlying the first graphene layer, and a second piezoelectric material layer under the second graphene layer, the second piezoelectric material layer having a negatively-charged surface and a positively-charged surface, the negatively-charged surface contacting the second graphene layer.

Graphene laminate with band gap

An access management system and method are provided. The access management system includes an authentication means having an authentication key indicating an identity of a visitor, an authentication terminal configured to register by receiving user information corresponding to the authentication key, and store the user information matched with the authentication key recognized when the visitor accesses as an access history information of the visitor, and a user terminal configured to provide the user information corresponding to the authentication key to the authentication terminal.

Access management system and method

An inverter device including a tunable diode device and a diode device that includes a control terminal connected to an input terminal of the inverter device, an anode terminal connected to a high-level voltage terminal, and a cathode terminal connected to an output terminal of the inverter device, wherein the diode device is configured to turn on or off according to a voltage applied to the control terminal.

Inverter device, NAND device, NOR device, and logic device including the same

A heterogeneous laminate including: graphene; and a thermoelectric inorganic compound disposed on the graphene.

Heterogeneous laminate including graphene, and thermoelectric material, thermoelectric module, and thermoelectric apparatus including the heterogeneous laminate

A hydrophobic organic layer may be formed on a surface of a graphene doped with a dopant to improve stability of the doped graphene with respect to moisture and temperature. Thus, the transparent electrode having the doped graphene containing the hydrophobic organic layer may be usefully applied in solar cells or display devices.

Doped graphene structure comprising hydrophobic organic material, method for preparing the same, and transparent electrode, display device and solar cell comprising the electrode

Provided is a transparent electrode including a graphene sheet. A transparent electrode having high conductivity, low sheet resistance, and low surface roughness can be prepared by employing the graphene sheet.

Transparent electrode comprising graphene sheet, and display and solar cell including the electrode

Semiconductor carbon nanotubes functionalized by hydrogen and a method for fabricating the same, wherein the functional hydrogenated semiconductor carbon nanotubes have chemical bonds between carbon and hydrogen atoms. The semiconductor carbon nanotube fabricating method includes heating carbon nanotubes in a vacuum, dissociating hydrogen molecules in hydrogen gas into hydrogen atoms, and exposing the carbon nanotubes to the hydrogen gas to form chemical bonds between carbon atoms of the carbon nanotubes and the hydrogen atoms. The conversion of metallic carbon nanotubes into semiconductor nanotubes and of semiconductor nanotubes having a relatively narrow energy bandgap into semiconductor nanotubes having a relative wide energy bandgap can be achieved using the method. The functional hydrogenated semiconductor carbon nanotubes may be applied and used in, for example, electronic devices, optoelectronic devices, and energy storage.

Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same

Discussed are an ink containing nanoparticles for formation of thin film of a solar cell and its preparation method, CIGS thin film solar cell having at least one light absorption layer formed by coating or printing the above ink containing nanoparticles on a rear electrode, and a process for manufacturing the same. More particularly, the above absorption layer includes Cu, In, Ga and Se elements as constitutional ingredients thereof and such elements exist in the light absorption layer by coating or printing an ink that contains CuSe nanoparticles and (In,Ga)Senanoparticles on the rear electrode, and heating the treated electrode with the ink. Since Cu(In,Ga)Se(CIGS) thin film is formed using the ink containing nanoparticles, a simple process is used without requirement of vacuum processing or complex equipment and particle size of the thin film, Ga doping concentration, etc., can be easily regulated.

Ink for forming thin film of solar cells and method for preparing the same, CIGS thin film solar cell using the same and manufacturing method thereof

Provided is a carbon nanofiber, wherein the carbon nanofiber has a surface oxygen content of at least 0.03 calculated by the formula: Oxygen content=[atomic percentage of oxygen/atomic percentage of carbon] using atomic percentages of oxygen and carbon, respectively calculated from an area of an oxygen peak having a binding energy of 524 to 540 eV, an area of a nitrogen peak having a binding energy of 392 to 404 eV, and an area of a carbon peak having a binding energy of 282 to 290 eV in X-ray photoelectron spectroscopy. The nanofibers have high surface oxygen content and may have metal catalyst nano particles densely and uniformly distributed on the outer wall of the carbon nanofibers, thereby having high electrochemical efficiency.

Method of preparing a nanofiber and a fuel cell including the nanofiber

Provided is a nanocomposite for the catalyst layer of a fuel cell electrode including: a carbon nanofiber; and metal catalyst particles uniformly applied to the surface of the carbon nanofiber, wherein the carbon nanofiber has a surface oxygen content of at least 0.03 calculated by the formula: Oxygen content=[atomic percentage of oxygen/atomic percentage of carbon] using atomic percentages of oxygen and carbon, respectively calculated from an area of an oxygen peak having a binding energy of 524 to 540 eV, an area of a nitrogen peak having a binding energy of 392 to 404 eV, and an area of a carbon peak having a binding energy of 282 to 290 eV in X-ray photoelectron spectroscopy. The nanocomposite according to the present invention has high surface oxygen content and has metal catalyst nano particles densely and uniformly distributed on the outer wall of the carbon fibers, thereby having high electrochemical efficiency. Thus, efficiency of fuel cells can be improved using the nanocomposite.

Nanocomposite for fuel cell, method of preparing the nanocomposite, and fuel cell including the nanocomposite

The present invention provide a vertical nano-sized transistor using carbon nanotubes capable of achieving high-density integration, that is, tera-bit scale integration, and a manufacturing method thereof, wherein in the vertical nano-sized transistor using carbon nanotubes, holes having diameters of several nanometers are formed in an insulating layer and are spaced at intervals of several nanometers. Carbon nanotubes are vertically aligned in the nano-sized holes by chemical vapor deposition, electrophoresis or mechanical compression to be used as channels. A gate is formed in the vicinity of the carbon nanotubes using an ordinary semiconductor manufacturing method, and then a source and a drain are formed at lower and upper parts of each of the carbon nanotubes thereby fabricating the vertical nano-sized transistor having an electrically switching characteristic.

Growing community of inventors

Seoul, South Korea

Young-hee Lee