Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Lg Display Co., Ltd.

Sungkyunkwan University

Samsung Corning Precision Glass Co., Ltd.

Young-Hee Lee

Jae-young Choi

Hyeon-jin Shin

Un-jeong Kim

Sung-Jin Kim

Eun-hong Lee

Min-Seok Sung

Gang-hee Han

Woo-jong Yu

Sung-Soo Kim

Seon-mi Yoon

Kyou-Yoon Sheem

Joon-Sup Kim

Yong-Mook Kang

Seong-jae Choi

Kay-hyeok An

Sang-min Lee

Chan-ho Pak

Wan-jun Park

Kyeu-Yoon Sheem

Jeong-hee Lee

Wan-Uk Choi

Seok-gwang Doo

Seung-Hyun Hong

Chang-Ho Oh

Soon-Il Yun

Seok-Hyun Cho

Seung-Hyun Baik

Kyeong-Taek Jung

Woo-Yeal Jun

Kyung-Soon Kim

Cheol-min Yang

Il-ha Lee

Dinh Loc Duong

Sung-Kon Ko

Jae-Young Choi

Won-Bong Choi

An active material for a rechargeable lithium battery is provided with a non-carbon-based material on which nanofiber-shaped carbon having an oxygen-included functional group is grown. The negative active material for a rechargeable lithium battery has good conductivity and cycle life characteristics.

Active material for rechargeable lithium battery and rechargeable lithium battery including the same

The display device includes a display panel including upper and lower array substrates, and a patterned retarder to separate an image displayed on the display panel into left-eye and right-eye images, wherein the lower array substrate includes gate and data lines to define pixel areas, a pixel electrode formed at each pixel area, and a black stripe formed at a boundary between the pixel areas to display the left-eye image and the pixel areas to display the right-eye image, wherein the black stripe includes a first black stripe formed on the same layer and formed of the same material as an opaque layer of a thin film transistor, and a second black stripe overlapped with the first black stripe and formed on the same layer and formed of the same material as the pixel electrode.

Stereoscopic image display device and method for manufacturing the same

A display device, which can prevent defects in a drive power transmission line and damage which is caused to a common electrode by such defects, and a method for detecting line defects of the display device are provided. The display device includes a plurality of drive power transmission lines for transmitting drive power to pixels, at least one defect detection line that crosses at least one drive power transmission line, and a defect detector for outputting a defect detection signal to the at least one defect detection line, collecting a feedback signal generated from the defect detection line according to the defect detection signal, and determining whether or not there is a defect in the at least one drive power transmission line based on comparison between the defect detection signal and the feedback signal.

Display device and method for detecting line defects of the display device

Methods of preparing graphene nano ribbons may include forming a graphene sheet on at least one surface of a substrate, forming a plasma mask having a nano pattern on the graphene sheet, and forming a nano pattern on the graphene sheet by plasma treating a stack structure on which the plasma mask is formed.

Graphene nano ribbons and methods of preparing the same

A method of analyzing graphene includes providing a first graphene structure including graphene having grains and grain boundaries, and a support portion for supporting the graphene, generating a second graphene structure by oxidizing the first graphene structure, and detecting a shape of the graphene.

Apparatus and method for analyzing graphene and graphene boundary

A static random access memory (SRAM) includes: a first carbon nanotube (CNT) inverter, a second CNT inverter, a first switching transistor, and a second switching transistor. The first CNT inverter includes at least a first CNT transistor. The second CNT inverter is connected to the first CNT inverter and includes at least one second CNT transistor. The first switching transistor is connected to the first CNT inverter. The second switching transistor is connected to the second CNT inverter.

Static random access memories having carbon nanotube thin films

A graphene laminate including a substrate, a binder layer on the substrate, and graphene on the binder layer, wherein the graphene is bound to the substrate by the binder layer.

Graphene laminate and method of preparing the same

Provided are a method of doping carbon nanotubes, p-doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes. Particularly, a method of doping carbon nanotubes having improved conductivity by reforming the carbon nanotubes using an oxidizer, doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes are provided.

Process of preparing carbon nanotube having improved conductivity

Carbon nanotube having improved conductivity, process of preparing the same, and electrode comprising the carbon nanotube

Provided is a method of manufacturing carbon nanotube (CNT) device arrays. In the method of manufacturing CNT device arrays, catalyst patterns may be formed using a photolithography process, CNTs may be grown from the catalyst patterns, and electrodes may be formed on the grown CNTs.

Method of manufacturing carbon nanotube device array

The present invention relates to an active material for a rechargeable lithium battery and a rechargeable lithium battery including the same. The active material includes an active material and a fiber-shaped or tube-shaped carbon conductive material attached to the surface of the active material. The active material includes a conductive shell including a fiber-shaped or tube-shaped carbon conductive material and increases discharge capacity due to improved conductivity and improves cycle-life efficiency by maintaining paths between active material particles during charge and discharge cycles.

Active material for rechargeable lithium battery and rechargeable lithium battery including same

A convertible logic circuit includes a plurality of carbon nanotube transistors. Each carbon nanotube transistors are configurable as p-type or an n-type transistors according to a voltage of a power source voltage. Each carbon nanotube transistor includes a source electrode, a drain electrode, a channel formed of a carbon nanotube between the source electrode and the drain electrode, a gate insulating layer formed on the carbon nanotubes, and a gate electrode formed on the gate insulating layer.

Convertible logic circuits comprising carbon nanotube transistors having ambipolar charateristics

Carbon nanotubes have an R value of at least 1.3, where R is defined as the ratio (I/I) of an integral value of D band intensity (I) to an integral value of G band intensity (I) in the Raman spectrum. Such carbon nanotubes can be used to form a support catalyst with good catalyst activity because the surface defects on the carbon nanotubes promote improved catalyst distribution in that the support catalyst includes catalyst particles having a small mean particle size and a slight variation in particle size. Such a support catalyst has particularly useful properties when used as a catalyst layer for a fuel cell electrode.

Carbon nanotube, support catalyst, method of preparing the support catalyst and a fuel cell comprising the support catalyst

Provided are a method of doping a carbon nanotube (CNT) of a field effect transistor and a method of controlling the position of doping ions. The method may include providing a source, a drain, the CNT as a channel between the source and the drain, and a gate, applying a first voltage to the gate, and adsorbing ions on a surface of the CNT.

Method of doping transistor comprising carbon nanotube, method of controlling position of doping ion, and transistors using the same

Growing community of inventors

Suwon-si, South Korea

Young-Hee Lee