Samsung Electronics Co., Ltd.

Young Gu Jin

Dong Ki Min

Young Chan Kim

Tae Yon Lee

Doo Won Kwon

Min Ho Kim

Kwang Hyun Lee

Yoon Dong Park

Ju Hwan Jung

Eric R Fossum

Seok Lee

Tae Chan Kim

Min-Sun Keel

Tae Sub Jung

Tae Seok Oh

Sang Chul Sul

Moo Sup Lim

Yong Hun Kwon

Sung Ho Choi

Hyun Surk Ryu

Jung Chak Ahn

Yoon Sun Park

Kyung Il Kim

Jung Hoon Jung

Jin Kyung Lee

Sung Young Seo

Sang Bo Lee

Jin Wuk Choi

Dong Wook Kwon

Dong Seok Suh

Yong Wan Jin

Kwang Hee Lee

Yoon-Dong Park

Young Oh

Won Seok Lee

Kyoung Lae Cho

Min-Ho Kim

Kwan-Young Oh

Hyun Seok Lee

Sung-Jae Byun

Jung Bin Yun

Gi-Sang Lee

Sun Jung Kim

Masaru Ishii

Kyoung-Lae Cho

Jung Wook Lim

Chil Hee Chung

Se-won Seo

Chang Keun Lee

Sae Young Kim

Dae Shik Kim

Kwang-Chol Choe

Jae Pil Kim

Eung Kyu Lee

Seung Won Cha

Suk Pil Kim

Mun Hwan Kim

Jung Kyu Jung

Gi Sang Lee

Seung Hyuk Chang

Dae Kil Cha

Kyoung Sik Moon

Samuel Sungmok Lee

Gwi Deok Lee

Seoung Hyun Kim

Chan Hyung Kim

Soo Jung Hwang

An image sensor includes a pixel group including a first region and a second region; and a color filter having a first color on the pixel group, wherein the first region includes a first pixel including a first photodiode, a first floating diffusion region on the first photodiode, and a first transfer transistor on the first photodiode, the second region includes a second pixel including a second photodiode, a second floating diffusion region, and a second transfer transistor connected to the second photodiode and the second floating diffusion region, at least one of the first pixel and the second pixel is arranged in m*n (m and n are natural numbers of 2 or more), and from a planar point of view, a total area of the first photodiode included in the first region is greater than a total area of the second photodiode included in the second region.

Image sensor and vehicle

Disclosed is a semiconductor device including a substrate, a gate structure on the substrate, and including first and second sides extended in parallel with a first direction and spaced apart from each other in a second direction, and a third side extended in parallel with the second direction, and a plurality of source/drain areas including first and second source/drain areas spaced apart from each other in the second direction and a third source/drain area spaced apart from at least one of the first or second source/drain area in the first direction, the first and second source/drain areas overlap the first and second sides, respectively, the third source/drain area overlaps one of the first side or the third side, and a voltage applied to the first and second source/drain areas and a voltage applied to the third source/drain area operate based on their respective values different from each other.

Semiconductor device including multiple sources and image sensor including the semiconductor device

A unit pixel includes a first photoelectric converter, a first transfer transistor disposed between to the first photoelectric converter and a first node, a connection transistor disposed between and connected to a second node and the first node, a second transfer transistor disposed between and connected to a third node and the second node, a second photoelectric converter connected to the third node, and a storage metal-oxide semiconductor (MOS) capacitor connected to the third node. The storage MOS capacitor stores charges from the second photoelectric converter. For a first time period, first charges accumulated in the first photoelectric converter are transferred to the first node, for a second time period, second charges accumulated in the first photoelectric converter are transferred to the first node and the second node, and for a third time period, third charges accumulated in the second photoelectric converter are transferred to the first to third nodes.

Unit pixel with photoelectric converters and storage MOS capacitor connected to photoelectric converter, image sensor, and vehicle

An image sensor, which stores electric charge overflowing from a photoelectric conversion layer, includes: (1) a substrate including a first surface and a second surface, which is opposite to the first surface and upon which light is incident, (2) a photoelectric conversion layer in the substrate, (3) an isolation film disposed on the substrate, along the photoelectric conversion layer, (4) a storage conductive pattern disposed in the isolation film, (5) a transfer gate disposed on a first surface of the substrate, (6) a first impurity-injected area disposed between the photoelectric conversion layer and the isolation film, and (7) a second impurity-injected area disposed on the first surface of the substrate and connected to the transfer gate. The first and second impurity-injected areas are electrically connected.

Image sensor and image sensing circuit

A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

3D image sensor

An image sensor comprises an upper chip including pixels; and a lower chip placed below the upper chip, wherein a pixel of the pixels includes an optical conversion element configured that light is incident on the optical conversion element, a first storage gate or a first storage node which is electrically connected to the optical conversion element and configured to store electric charge transferred from the optical conversion element during a first time interval, and a second storage gate or a second storage node which is electrically connected to the optical conversion element and configured to store the electric charge transferred from the optical conversion element during a second time interval different from the first time interval, the pixel is configured to generate a first pixel signal on the basis of the electric charge stored in the first storage gate, the lower chip includes a frame buffer.

Image sensor and image sensing device

An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.

Image sensors and distance measuring devices using the same

An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.

Image sensor and imaging device

An image sensor includes a plurality of pixels, at least one of the pixels comprising: a photodiode configured to generate charges in response to light; and a pixel circuit disposed on the substrate, and including a storage transistor configured to store the charges generated by the photodiode, and a transfer transistor connected between the storage transistor and a floating diffusion node, wherein a potential of a boundary region between the storage transistor and the transfer transistor has a first potential when the transfer transistor is in a turned-off state, and has a second potential, lower than the first potential, when the transfer transistor is in a turned-on state.

Image sensor

Image sensors are provided. An image sensor includes a substrate that includes a pixel region, a first surface, and a second surface that is opposite the first surface. The image sensor includes first and second photogates that are on the first surface and are configured to generate electric charge responsive to incident light in the pixel region. Moreover, the image sensor includes first and second lenses that are on the second surface and are configured to pass the incident light toward the first and second photogates.

Image sensors with multiple lenses per pixel region

A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.

Semiconductor devices including infrared sensor with infrared photodiode and color sensor with color photodiode

An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.

Image sensor having a photoelectric conversion layer coupled to a storage node through a pinning layer with P-type impurities

Semiconductor devices including first sensor with infrared photodiode and second sensor with color photodiode

Growing community of inventors

Osan-si, South Korea

Young Gu Jin