Samsung Display Co., Ltd.

Ls Mtron Ltd.

Other

Young Gil Park

Na Ri Ahn

Ki Hyun Kim

Jun Su Park

Soo Im Jeong

Moon Sung Kim

Sung Chan Jo

Jin Suk Lee

Young Do Kim

Ki Nam Kim

Kyung Lae Rho

Ji Hye Seo

Young Moon Kim

Ki Cheol Song

Jae-Bum Han

Jung Hwa Park

Gi Suk Kwon

Jang Doo Lee

Sug Woo Jung

O Jun Kwon

Hyun Sang Seo

Jae Bum Han

Jai Sun Kyoung

Jang Ho Lee

Jong Beom Hong

Jai Yoon Shin

Young Jun Yoo

Jong Rak Choi

Cheung Hyun Nam

Nam Hyung Chung

Shin Hwa Choi

Yong Min Seo

Kyeom Ryong Kim

Hyun Ju Lee

A display device includes a first substrate having, defined thereon, an active region and a nonactive region around the active region; an active element layer on a first surface of the first substrate and in the active region; a second substrate facing the first surface of the first substrate, the second substrate being on the active element layer; and an antireflection member on a first surface of the second substrate that faces the first substrate, the antireflection member being spaced apart from the active element layer, wherein the antireflection member includes first, second, third, and fourth refractive layers sequentially stacked from the first surface of the second substrate, refractive indexes of the first and third refractive layers are greater than refractive indexes of the second and fourth refractive layers, and the fourth refractive layer includes aluminum, indium, and/or gallium.

Display device

A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. The first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.

Display device including an auxiliary layer

A display device includes a display panel including a front surface and a second surface which is opposite to the front surface; a front laminated structure attached to the front surface of the display panel; and a rear laminated structure attached to the second surface of the display panel. Each of the front laminated structure and the rear laminated structure includes a bonding member, and an average modulus of the bonding member of the front laminated structure is smaller than an average modulus of the bonding member of the rear laminated structure.

Display device including bonding member

A display device includes a display panel, a polarization member facing the display panel, a cover window including an inorganic material and facing the display panel with the polarization member therebetween, and a window bonding member which is between the cover window and the polarization member attaches the cover window to the polarization member. The window bonding member which attaches the cover window to the polarization member has a modulus of about of 1 MPa to about 10 MPa.

A display device includes: a substrate; a polycrystalline silicon film on the substrate; and a first buffer film between the substrate and the polycrystalline silicon film and having one surface contacting the polycrystalline silicon film and another surface opposite to the one surface, wherein the one surface of the first buffer film has a first root mean square (RMS) roughness range, and the first RMS roughness range is 1.5 nm or less.

A display device includes: a substrate; and a semiconductor layer disposed on the substrate, and including a first area, a second area, and a third area that are sequentially positioned by dividing the semiconductor layer into three areas in a thickness direction of the semiconductor layer, wherein the semiconductor layer includes polycrystalline silicon, a concentration of fluorine contained in the semiconductor layer has a first peak value in the first area and a second peak value in the third area, and the first peak value of the concentration of the fluorine in the semiconductor layer is about 30% or less of the second peak value of the concentration of the fluorine in the semiconductor layer.

Display device having insulating layer containing fluorine

A display device including: a display panel; a polarizing member overlapping the display panel; a cover window overlapping the polarizing member; and a window bonding member disposed between the polarizing member and the cover window, wherein a penetration depth of the window bonding member that is measured by an indentation tester is equal to or less than approximately 13 μm.

Display device including a bonding member

Display device comprises a concentration of fluorine provides first peak in first area and second peak in third area contained in the semiconductor layer

The disclosure relates to a display device including a display panel, an inorganic layer directly contacting the display panel, and a carbon layer directly contacting the inorganic layer. A thickness of the carbon layer is about 1 nm to about 10 nm.

Growing community of inventors

Asan-si, South Korea

Young Gil Park