Samsung Electronics Co., Ltd.

Young-eal Kim

Sang-jun Choi

Dong-joon Ma

Chang-Soo Lee

Hoon Song

Hong-seok Lee

Jung-hyun Lee

Ki-Hong Kim

Youngjun Yun

Vladimir Volynets

Jesada Ungnapatanin

Won-taek Park

Woo-young Yang

Seong-yong Park

Provided are a three-dimensional (3D) interaction apparatus capable of recognizing a user's motions in a 3D space for performing a 3D interaction function, a display device including the 3D interaction apparatus, and a method of driving the 3D interaction apparatus. The 3D interaction apparatus includes a depth camera which obtains a depth image including depth information of a distance between an object and the depth camera; an active optical device disposed in front of the depth camera and configured to adjust a propagation path of light by refracting incident light so as to adjust a field of view of the depth camera; and a driving unit which controls operation of the active optical device.

3D interaction apparatus, display device including the same, and method of driving the same

A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer.

Transistor and method of operating same

Provided are a nonvolatile memory device having a vertical folding structure and a method of manufacturing the nonvolatile memory device. A semiconductor structure includes first and second portions that are substantially vertical. A plurality of memory cells are arranged along the first and second portions of the semiconductor structure and are serially connected.

Nonvolatile memory device and method of fabricating the same

An electromagnetic induced accelerator based on coil-turn modulation, including inner and outer cylinders with different diameters, the cylinders being coaxially disposed to form a channel which is a spatial portion therebetween; a discharging coil wound spirally inward along the upper surface of the channel for generating plasma by inducing a magnetic field and secondary current in the channel; and inner and outer coils wound helically around along the inner surface of the inner cylinder and the outer surface of the outer cylinder in parallel with each other for accelerating plasma in the direction of a common axis of the inner and outer cylinders by offsetting the magnetic field induced in the direction of the axis.

Electromagnetic induced accelerator based on coil-turn modulation

A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.

Apparatus of depositing thin film with high uniformity

Growing community of inventors

Hwaseong-si, South Korea

Young-eal Kim