Samsung Electronics Co., Ltd.

Young-Deuk Kim

Jae Choon Kim

Jae-Choon Kim

Taehwan Kim

Kyung Suk Oh

Mi-Na Choi

Younghoon Hyun

Hee-jung Hwang

Eon-Soo Jang

Eungchang Lee

Woo-hyun Park

A semiconductor package may include vertically-stacked semiconductor chips and first, second, and third connection terminals connecting the semiconductor chips to each other. Each of the semiconductor chips may include a semiconductor substrate, an interconnection layer on the semiconductor substrate, penetration electrodes connected to the interconnection layer through the semiconductor substrate, and first, second, and third groups on the interconnection layer. The interconnection layer may include an insulating layer and first and second metal layers in the insulating layer. The first and second groups may be in contact with the second metal layer, and the third group may be spaced apart from the second metal layer. Each of the first and third groups may include pads connected to a corresponding one of the first and third connection terminals in a many-to-one manner. The second group may include pads connected to the second connection terminal in a one-to-one manner.

Semiconductor package

A heat radiation device includes a semiconductor substrate. A first electrode is disposed on the semiconductor substrate. A second electrode is disposed on the semiconductor substrate and is spaced apart from the first electrode. A first through electrode is disposed in the semiconductor substrate. The first through electrode is electrically connected to the first electrode.

Heat radiation device, semiconductor package comprising the same, and semiconductor device comprising the same

An electronic device includes a substrate, a first electronic product arranged on the substrate, a second electronic product arranged on the substrate to be spaced apart from the first electronic product, and a heat dissipating assembly covering the first and second electronic products, the heat dissipating assembly comprising a heat dissipating chamber including a hermetically sealed space having a first portion having one or more gaps in which a flowable heat dissipation fluid is disposed and having a second portion in which a solid thermal conductive member is disposed to prevent the flow of the heat dissipation fluid across the second portion with respect to a plan view, wherein the first portion of the heat dissipating chamber has a first thermal conductivity and overlaps with the first electronic product in the plan view, wherein the solid thermal conductive member has a second thermal conductivity less than the first thermal conductivity, wherein the solid thermal conductive member overlaps with the second electronic product in the plan view, wherein the overlapping area of the solid thermal conductive member with the second electronic product is greater than 50% of an area of the second electronic product in the plan view.

Electronic device and method of manufacturing the electronic device

A semiconductor device includes a semiconductor package and a mark. The semiconductor package includes a semiconductor chip including a hot spot from which heat is generated, and a mold layer encapsulating the semiconductor chip. The mark is disposed on the semiconductor package. The mark is formed in a region of the semiconductor package that corresponds to a position of the hot spot.

Semiconductor device with heat information mark

A package substrate may include an insulating substrate, internal circuits and a warpage-suppressing member. The insulating substrate may have a plurality of mount regions in which semiconductor chips may be mounted, and a peripheral region. The internal circuits may be arranged in the mount regions. The warpage-suppressing member is different from the semiconductor chips and may be arranged in at least one of the mount regions to suppress a warpage of the insulating substrate. Thus, warpage of the package substrate may be suppressed during a reflow process.

Growing community of inventors

Hwaseong-si, South Korea

Young-Deuk Kim