Hynix Semiconductor Inc.

Young-Dae Kim

Kee-Jeung Lee

Deok-Sin Kil

Jin-Hyock Kim

Kwan-Woo Do

Han-Sang Song

Jae-Sung Roh

Kyung-Woong Park

Seung-Jin Yeom

Jeong-Yeop Lee

Su-Jin Chae

Hai-Won Kim

Eun-A Lee

Ho-Jin Cho

Jun-Soo Chang

Mi-Hyoung Lee

Ja-Yong Kim

A capacitor includes a pillar-type storage node, a supporter disposed entirely within an inner empty crevice of the storage node, a conductive capping layer over the supporter and contacting the storage node so as to seal an entrance to the inner empty crevice, a dielectric layer over the storage node, and a plate node over the dielectric layer.

Capacitor with pillar type storage node and method for fabricating the same

In a semiconductor device including a carbon-containing electrode and a method for fabricating the same, an electrode has a high work function due to a carbon-containing TiN layer contained therein. It is possible to provide a dielectric layer having a high permittivity and thus to reduce the leakage current by forming an electrode having a high work function. Also, sufficient capacitance of a capacitor can be secured by employing an electrode having a high work function and a dielectric layer having a high permittivity.

Semiconductor device including carbon-containing electrode and method for fabricating the same

A capacitor includes a lower electrode, a dielectric layer, an upper electrode, and a ruthenium oxide layer. At least one of the lower electrode and the upper electrode is formed of a ruthenium layer, and the ruthenium oxide layer is disposed next to the ruthenium layer.

Semiconductor device and method for fabricating the same

A noble metal layer is formed using ozone (O) as a reaction gas.

Method of forming noble metal layer using ozone reaction gas

A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with impurities may include a combination of a pure nickel layer and a nickel layer with impurities.

Method of fabricating capacitor

A semiconductor device, and a method of fabricating the semiconductor device, which is able to prevent a leaning phenomenon from occurring between the adjacent storage nodes. The method includes forming a plurality of multi-layered pillar type storage nodes each of which is buried in a plurality of mold layers, wherein the uppermost layers of the multi-layered pillar type storage nodes are fixed by a support layer, etching a portion of the support layer to form an opening, and supplying an etch solution through the opening to remove the multiple mold layers. A process of depositing and etching the mold layer by performing the process 2 or more times to form the multi-layered pillar type storage node. Thus, the desired capacitance is sufficiently secured and the leaning phenomenon is avoided between adjacent storage nodes.

Semiconductor device and method of fabricating the same

A semiconductor device includes a semiconductor substrate, an insulation pattern on the semiconductor substrate, and an etch stop layer on the insulating pattern, the insulation pattern and the etch stop layer defining a contact hole that exposes the substrate, a first plug filled in a portion of the contact hole, a diffusion barrier layer formed above the first plug and in a bottom portion and on sidewalls of a remaining portion of the contact hole, a second plug fainted on the diffusion barrier layer and filled in the contact hole, and a storage node coupled to and formed on the second plug.

Semiconductor device including ruthenium electrode and method for fabricating the same

A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. A sacrificial pattern is formed over the isolation layer and covers the cell region. The isolation layer is etched in the peripheral region to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed.

Method for fabricating a capacitor utilizes the sacrificial pattern covering the cell region

A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose upper outer walls of the storage nodes. A sacrificial pattern is formed over the isolation layer to enclose the upper outer walls of the storage nodes. The isolation layer in the peripheral region is etched to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed.

Method for fabricating capacitor utilizes a sacrificial pattern enclosing the upper outer walls of the storage nodes

A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuTiOfilm is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of fabricating the capacitor through a sequential formation of a bottom electrode, a dielectric layer and a top electrode over a substrate includes forming a RuTiOfilm during a formation of at least one of the bottom electrode and top electrode, where x, y and z are positive real numbers.

Method of fabricating capacitor in semiconductor device

A method for fabricating a capacitor includes forming a sacrificial layer having a plurality of trenches on an upper portion of a substrate, forming storage nodes in the trenches, exposing upper portions of the storage nodes by removing a portion of the sacrificial layer, forming supporters to support the exposed upper portions of the storage nodes, removing the sacrificial layer under the supporters, and removing the supporters.

Method for fabricating capacitor

A capacitor includes a pillar-type storage node, a supporter filling an inner empty crevice of the storage node, a dielectric layer over the storage node, and a plate node over the dielectric layer.

Capacitor with pillar type storage node and method for fabricating the same including conductive capping layer

A method for fabricating a capacitor includes forming an isolation layer over a substrate. The isolation layer forms a plurality of open regions. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose upper outer walls of the storage nodes. A sacrificial layer is formed over the isolation layer to enclose the upper outer walls of the storage nodes. The isolation layer and the sacrificial layer are then removed.

Method for fabricating a cylinder-type capacitor utilizing a connected ring structure

A method for fabricating a capacitor includes providing a substrate having a capacitor region is employed, forming a first RuOlayer over the substrate, forming a Ru layer for a lower electrode over the first RuOlayer and deoxidizing the first RuOlayer, forming a dielectric layer over the Ru layer for a lower electrode, and forming a conductive layer for an upper electrode over the dielectric layer, wherein the first RuOlayer contains oxygen in an amount less than an oxygen amount of a RuOlayer.

Method for fabricating capacitor in semiconductor device

A semiconductor device includes a semiconductor substrate, an insulation pattern on the semiconductor substrate, and an etch stop layer on the insulating pattern, the insulation pattern and the etch stop layer defining a contact hole that exposes the substrate, a first plug filled in a portion of the contact hole, a diffusion barrier layer formed above the first plug and in a bottom portion and on sidewalls of a remaining portion of the contact hole, a second plug formed on the diffusion barrier layer and filled in the contact hole, and a storage node coupled to and formed on the second plug.

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Ichon-shi, South Korea

Young-Dae Kim