Semiconductor Components Industries, LLC

Fairchild Korea Semiconductor Ltd.

Young-chul Kim

Young-chul Choi

Kyeong-seok Park

Kyu-hyun Lee

Bong-Yong Lee

Jin-myung Kim

Jae-duck Jeon

Bong-yong Lee

A power device having fast switching characteristic, while keeping EMI noise to a minimum and a method of fabricating the same are provided. The power device includes a first field stop layer having a first conductivity type, a first drift region formed on the first field stop layer and having a first conductivity type in an impurity concentration that is lower than the first field stop layer, a buried region formed on the first drift region and having the first conductivity type in an impurity concentration that is higher than the first drift region, a second drift region formed on the buried region, a power device cell formed at an upper portion of the second drift region, and a collector region formed below the first field stop layer.

Power device configured to reduce electromagnetic interference (EMI) noise

Provided are a power device having an improved field stop layer and a method of manufacturing the same. The method can include performing a first ion implant process by implanting impurity ions of a first conductive type into a front surface of a semiconductor substrate to form an implanted field stop layer where the semiconductor substrate is the first conductive type. The method can include performing a second ion implant process by implanting impurity ions of the first conductive type into a first part of the implanted field stop layer such that an impurity concentration of the first part of the implanted field stop layer is higher than an impurity concentration of a second part of the implanted field stop layer.

Power device and method of manufacturing the same

Provided are a power device having an improved field stop layer and a method of manufacturing the same. The power device includes: a first field stop layer formed of a semiconductor substrate and of a first conductive type; a second field stop layer formed on the first field stop layer and of the first conductive type, the second field stop layer having a region with an impurity concentration higher than the first field stop layer; a drift region formed on the second field stop layer and of the first conductive type, the drift region having an impurity concentration lower than the first field stop layer; a plurality of power device cells formed on the drift region; and a collector region formed below the first field stop layer, wherein the second field stop layer includes a first region having a first impurity concentration and a second region having a second impurity concentration higher than the first impurity concentration.

Power device including a field stop layer

Growing community of inventors

Gimpo-si, South Korea

Young-chul Kim