Samsung Electronics Co., Ltd.

Young-cheon Jeong

Jae-Hyun Park

Ki-chul Kim

Chul-soon Kwon

Hyok-Ki Kwon

Jeong-Uk Han

Sang-hoon Park

Jung-Ho Moon

Jae-Min Yu

Yong-Seok Chung

Kwan-Jong Roh

In-gu Yoon

Byeong-Cheol Lim

Jae-min Yu

Yong-wook Kwon

Example embodiments provide a nonvolatile memory device using resistive elements. The nonvolatile memory device may include a semiconductor substrate, a plurality of variable resistance patterns on the semiconductor substrate, and a plurality of heat sink patterns that are level with the variable resistance patterns and coupled to a ground voltage.

Nonvolatile memory devices and method of manufacturing the same

In a method of manufacturing a semiconductor device, a tunnel insulation layer is formed on a substrate. A charge trapping layer is formed on the tunnel insulation layer. A protection layer pattern or a mold is formed on the charge trapping layer. Charge trapping layer patterns are formed on the tunnel insulation layer by etching the charge trapping layer using the protection layer pattern or the mold. The charge trapping layer patterns may be spaced apart from each other. Blocking layers are formed on the charge trapping layer patterns, respectively. A gate electrode is formed on the blocking layers and the tunnel insulation layer using the protection layer pattern or the mold.

Method of manufacturing a semiconductor device

A nonvolatile memory device includes a semiconductor substrate; a source region that is formed in the semiconductor substrate; a gate insulating film that is formed so as to partially overlap the source region on the semiconductor substrate; a floating gate that is formed on the gate insulating film so as to have a structure forming a uniform electric field in the portion that overlaps the source region; a control gate that is formed so as to be electrically isolated along one sidewall of the floating gate from an upper part of the floating gate, an inter-gate insulating film that is interposed between the floating gate and the control gate, and a drain region that is formed so as to be adjacent the other side of the control gate.

Nonvolatile memory device and method of fabricating the same

A nonvolatile memory device is provided which includes a floating gate having a lower portion formed in a trench defined in a surface of a substrate and an upper portion protruding above the surface of the substrate from the lower portion. A gate insulating layer is formed along an inner wall of the trench and interposed between the trench and the lower portion of the floating gate. A source region is formed in the substrate adjacent a first sidewall of the trench. A control gate having a first portion is formed over the surface of the substrate adjacent a second sidewall of the trench, and a second portion is formed over the upper portion of the floating gate and extending from the first portion. The first sidewall of the trench is opposite the second sidewall of the trench. An inter-gate insulating layer is formed on the upper portion of floating gate and interposed between the floating gate and the control gate, and a drain region is formed in the surface of the substrate adjacent the control gate and spaced from the second sidewall of the trench.

Nonvolatile memory device and method of manufacturing the same

Growing community of inventors

Yongin-si, South Korea

Young-cheon Jeong