Seoul National University

Samsung Electro-Mechanics Co., Ltd.

Snu Rdb Foundation

Korea Institute of Science and Technology

Young Chang Joo

Dae Hyun Nam

Ji Hoon Lee

Min Suk Jung

Tae Hoon Kim

Young Gwan Ko

Ho Young Lee

Hong Seok Min

Chang Sup Ryu

Myoung Woon Moon

Jae Woo Joung

Young Ah Song

In Young Kim

In Suk Choi

Na Rae Kim

Sung Il Oh

Ji Yong Kim

So Yeon Lee

Han Wool Yeon

Seol Min Yi

Won Hyo Joo

Yoo Yong Lee

Hyung Wook Park

Byoung Joon Kim

Shin Bok Lee

Provided is a method of manufacturing MoShaving a 1T crystal structure. The method includes performing phase transition from a 2H crystal structure of MoSto the 1T crystal structure by reacting MoShaving the 2H crystal structure with CO gas. The phase transition includes annealing the MoShaving the 2H crystal structure in an atmosphere including CO gas.

Method of manufacturing MoShaving 1T crystal structure

In order to provide a method for preparing a chalcogenide-carbon nanofiber, capable of implementing oxidation resistance characteristics and process simplification, the present invention provides a method for preparing a chalcogenide-carbon nanofiber and a chalcogenide-carbon nanofiber implemented by using the same, the method comprising the steps of: forming a chalcogenide precursor-organic nanofiber comprising a chalcogenide precursor and an organic material; and forming a chalcogenide-carbon nanofiber by selectively and oxidatively heat treating the chalcogenide precursor-organic nanofiber such that the carbon of the organic material is oxidized and the chalcogenide is reduced at the same time, wherein the oxidation reactivity of the chalcogenide is lower than that of carbon, the selective and oxidative heat treatment is carried out through one heat treatment step instead of a plurality of heat treatment steps, and the chalcogenide can form a chalcogenide-carbon nanofiber having a structure formed with at least one layer according to an oxygen partial pressure at which the selective and oxidative heat treatment is carried out.

Chalcogenide-carbon nanofiber and preparation method therefor

The present invention provides a production method of copper-carbon nanofibers, which can realize oxidation-resistant characteristics and process simplification, the production method comprising the steps of: forming a metal precursor-organic nanofiber comprising a metal precursor and an organic substance; and forming a metal-carbon nanofiber by performing a selective oxidation heat treatment to the metal precursor-organic nanofiber so as to simultaneously oxidize carbon of the organic substance and reduce the metal precursor to a metal, wherein the metal has a lower oxidation resistance than the carbon; the selective oxidation heat treatment is performed through a singly heat treatment step, not a plurality of heat treatment steps; and metal-carbon nanofibers with different structures may be formed according to the amount of partial oxygen pressure under which the selective oxidation heat treatment is performed.

Metal-carbon nanofiber and production method thereof

In the present invention, a copper electrode having a nanohole structure is prepared by using a polymer substrate in the form of nanopillars in order to avoid fatigue fracture that causes degradation of electrical and mechanical properties of a flexible electrode during repetitive bending of a typical metal electrode. The nanohole structure may annihilate dislocations to suppress the initiation of fracture and may blunt crack tips to delay the propagation of damage. Therefore, the nanohole electrode exhibits very small changes in electrical resistance during a bending fatigue test.

Member for flexible element and manufacturing method thereof

Disclosed herein are a printed circuit substrate and a method of manufacturing the same. The printed circuit substrate includes an insulating layer, and a circuit layer that includes a circuit pattern disposed on the insulating layer and a barrier layer that is disposed to cover at least one surface of the circuit pattern and suppresses electrochemical migration from the circuit pattern, thereby making it possible to achieve high-density and secure reliability, and the method of manufacturing the same.

Printed circuit substrate and method of manufacturing the same

Disclosed are a method of forming metal wiring and metal wiring formed using the same. The method includes printing wiring using an ink composition including metallic nanoparticles and dispersants maintaining dispersion of the metallic nanoparticles, performing a first firing process of firing the wiring under vacuum or in an inert atmosphere to suppress grain growth, and performing a second firing process of firing the wiring with the vacuum or inert atmosphere released, to accelerate grain growth. The method of forming metal wiring induces abnormal grain growth by rapidly removing dispersants, capable of inducing the growth of metallic nanoparticles, at a temperature at which the growth force of the metallic nanoparticles is high, in the process of firing the metallic nanoparticles. Accordingly, the metal wiring has a coarse-grained structure containing metallic particles with a large average particle size, and the electrical and mechanical characteristics thereof can be enhanced.

Method of forming metal wiring and metal wiring formed using the same

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Seoul, South Korea

Young Chang Joo