Korea Electronics Technology Institute

Lg Chem, Ltd

Young Chang Jo

Woo Kyeong Seong

Suk Won Jung

Hyuck Ki Hong

Min Ho Lee

Jae Gi Son

Kook Nyung Lee

Ki Man Jeon

Yeon Shik Choi

Won Hyo Kim

Yun Jae Won

Sung Min Hong

Kun Nyun Kim

The present disclosure relates to a UPS battery aging state calculation method and system, and more specifically, to an aging state calculation method and system of a UPS battery for accurately calculating an aging state (i.e., State of Health (SOH)) of the UPS battery itself by repeatedly executing the charge and self-discharge of the UPS battery through a switch.

Battery aging state calculation method and system

Disclosed is a sensor for measuring skin conductivity and a method of manufacturing the same, wherein the sensor includes: a base board made of a flexible material; an electrode provided on a surface of the base board, and transmitting an electrical signal; and an uneven structure provided on the electrode, and configured to increase an electrical contact area with skin via sweat secreted onto a surface of skin.

Sensors for measuring skin conductivity and methods for manufacturing the same

Disclosed is an image sensor using a nanowire, including a substrate, a photodetector for sensing incident light to produce photocurrent, the magnitude of which varies depending on the intensity of incident light, a signal processing module for outputting photodetection current including information about the presence or absence of incident light and the intensity of incident light based on the presence or absence of photocurrent and the magnitude thereof, and an electrode configured to electrically connect the photodetector and the signal processing module to each other and formed on the photodetector and the signal processing module, wherein the photodetector and the signal processing module are formed on the substrate, and the photodetector is formed of at least one silicon nanowire.

Image sensor using nanowire and method of manufacturing the same

Disclosed is an avalanche photodiode using a silicon nanowire, including a first silicon nanowire formed of silicon (Si), a first conductive region formed by doping one surface of the first silicon nanowire with a first dopant, and a second conductive region formed by doping one surface of the first silicon nanowire with a second dopant having a conductive type different from that of the first dopant so as to be arranged continuously in a longitudinal direction from the first conductive region, wherein, when the magnitude of a reverse voltage applied to both ends of the first silicon nanowire is equal to or greater than a preset breakdown voltage, avalanche multiplication of inner current occurs due to the incidence of light from the outside.

Avalanche photodiode using silicon nanowire and silicon nanowire photomultiplier using the same

A capacitive humidity sensor, and more particularly, to a capacitive humidity sensor and a manufacturing method thereof capable of increasing reliability of the sensor by forming a dehumidification layer of a polymer material having a large surface area between a lower electrode layer and an upper electrode layer while miniaturizing the humidity sensor by forming a sensor unit on an ROIC substrate.

Capacitive humidity sensor and manufacturing method

Growing community of inventors

Seoul, South Korea

Young Chang Jo