Samsung Electronics Co., Ltd.

Other

Samsung Electro-mechanics Co., Ltd.

Korea Institute of Science and Technology

Stats Chippac Pte. Ltd.

Korea Research Institute of Chemical Technology

Young Chan Ko

Myung Sam Kang

Il Seok Choi

Young Gwan Ko

Yong Koon Lee

Kil-Yeong Choi

Chang Bae Lee

Jae Heung Lee

Kwang Soo Yoon

Hyun Nam Cho

Jae Min Hong

Kyong Soon Lee

Cheol-Hyun Kim

Sang Hyun Park

Tae Keun Lee

Moon Il Kim

Hyung Jun Jeon

Jeong Seok Kim

Ki Ju Lee

Bong Ju Cho

Sung-Goo Lee

Young Jin Heo

Seung-Joo Kim

Hyoung-Wook Lee

A semiconductor package including a core structure, in which a first and second semiconductor chips and passive components are embedded, a connection structure disposed on a first side of the core structure, and including a redistribution layer electrically connected to the first and second semiconductor chips and the passive components, and a metal pattern layer and a backside wiring layer disposed on a second side of the core structure opposing the first side, and spaced apart from each other. The core structure includes a first metal layer surrounding the first semiconductor chip, a second metal layer surrounding the first semiconductor chip, and the first metal layer, a third metal layer surrounding the second semiconductor chip, and a fourth metal layer surrounding the second semiconductor chip, the passive components, and the third metal layer, and each of the first to fourth metal layers is electrically connected to the metal pattern layer.

Semiconductor package and antenna module comprising the same

A fan-out semiconductor package including a first redistribution layer; a first semiconductor chip on the first redistribution layer; an interconnector on the first redistribution layer and spaced apart from the first semiconductor chip; a molded layer covering the interconnector and side surfaces of the first semiconductor chip; and a second redistribution layer on the molded layer, wherein the interconnector includes a metal ball and is electrically connected to the first redistribution layer, the second redistribution layer includes a first line wiring, and a first via electrically connected to the first line wiring, the first via is connected to the interconnector, and a part of the first via is in the molded layer.

Fan-out semiconductor package

A method including forming a frame having an opening, forming a first metal layer, forming a first encapsulant, forming an insulation layer on the first metal layer, forming a first through-hole and a second through-hole penetrating the insulation layer and the first encapsulant, forming a second metal layer and a third metal layer, forming a second encapsulant, forming a first metal via and a second metal via penetrating the second encapsulant and a metal pattern layer on the second encapsulant, and forming a connection structure. The first metal layer and the second metal layer respectively are formed to extend to a surface of each of the first encapsulant and the frame, facing the metal pattern layer, and the first metal layer and the second metal layer are connected to the metal pattern layer through the first metal via and the second metal via having heights different from each other.

A semiconductor package includes a core structure having a first through-hole and including a frame having an opening, a passive component disposed in the opening, a first encapsulant covering the frame and the passive component, a first metal layer disposed on an inner surface of the first through-hole, and a second metal layer disposed on an inner surface of the opening; a first semiconductor chip disposed in the first through-hole and having a first connection pad; a second encapsulant covering the core structure and the first semiconductor chip; a connection structure disposed on the core structure and the first semiconductor chip and including a redistribution layer; and a metal pattern layer disposed on the second encapsulant. The first and second metal layers are connected to the metal pattern layer through first and second metal vias having heights different from each other.

A semiconductor package includes a frame having first and second through-portions, first and second semiconductor chips, respectively in the first and second through-portions, each having a first surface, on which a connection pad is disposed, a first encapsulant covering at least a portion of the first and second semiconductor chips, a first connection member on the first and second semiconductor chips including a first redistribution layer electrically connected to the connection pads of the first and second semiconductor chips and a heat dissipation pattern layer, at least one passive component above the first semiconductor chip on the first connection member, and at least one heat dissipation structure above the second semiconductor chip on the first connection member and connected to the heat dissipation pattern layer.

Semiconductor package and antenna module including the same

A semiconductor wafer scale package system is provided including providing a semiconductor substrate having a through-hole via with a conductive coating, forming a filled via by filling the through-hole via with a conductive material, coupling a package substrate to the filled via, and singulating a chip scale package from the semiconductor substrate and the package substrate.

Semiconductor wafer scale package system

The present invention relates to a process of preparing polycarbonate, more specifically to a process of preparing polycarbonates by solid state polymerization using microwave radiation, which comprises steps of preparing polycarbonate prepolymer having a certain range of viscosity average molecular weight; converting said polycarbonate prepolymer into crystalline particles having a certain degree of crystallinity; and producing polycarbonates by solid state polymerization of said crystalline particles by applying microwave radiation, thus resulting in production of high quality polycarbonates with high molecular weight within short time.

Process of preparing polycarbonates using microwave

The present invention relates to a process of preparing polycarbonates and more particularly, to the process of preparing polycarbonates through a melt polymerization reaction of dihydroxyaryl compounds with diarylcarbonate, wherein said melt polymerization is performed in the presence of a mixed catalyst composed of an oxygen (O) or sulfur (S) containing compound having lone-pair electrons and an alkali metal or alkaline earth metal salt in an appropriate ratio at a reduced temperature by accelerating a reaction rate to obtain high quality polycarbonates with higher than 15,000 g/mole of a viscosity average molecular weight and improved color.

Process of preparing polycarbonates

The present invention provides a process for preparing polyethylene naphthalate polymers comprising: esterifying a slurry comprising NDCA or a dicarboxylic acid containing NDCA or derivatives thereof, and ethylene glycol or a glycol containing ethylene glycol or derivatives thereof to produce esterification compounds comprising bis (beta-hydroxyethyl) naphthalate or low molecular weight polymers thereof, wherein one or more primary alcohol is added to the slurry; and polycondensing the above resultant esterification compounds to produce polyethylene naphthalate polymers. The process of the present invention allows for the preparation of a slurry more easily and to maximize the manufacturing efficiency. Ultimately, it is possible to increase the productivity of the PEN polymers and to obtain high quality PEN since the method of the present invention has an effect of minimizing side products of the polymerization by reducing the amount of ethylene glycol considerably and of shortening the reaction time of the esterification reaction.

Process for preparing polyethylene naphthalate based polymers by using NDCA or its derivates

Process for the preparation of polycarbonates

A process for preparing polyethylene naphthalate polymer by using a composite catalyst. The process comprises the steps of esterifying a dicarboxylic acid containing 2,6-NDCA, a dicarboxylic ester containing 2,6-NDC or derivatives thereof, with ethylene glycol or a glycol containing ethylene glycol to produce esterification polymers containing bis(beta-hydroxyethyl)naphthalate; continuously polycondensing the obtained esterification polymers to prepare a polymers of polyethylene naphthalate; and wherein the process includes using a composite polymerization catalyst, said composite polymerization catalyst comprising a titanium compound, a phosphorous compound and optionally an antimony compound. The process can considerably reduce both the esterification time and the polycondensation time and provides a good color and excellent physical characteristics.

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Seoul, South Korea

Young Chan Ko