Hyundai Electronics Industries Co. Ltd.

Young Bog Kim

Jong Choul Kim

Se Aug Jang

Byung Jin Cho

In Seok Yeo

Tae Sik Song

Sung Ku Kwon

Moon Sig Joo

A method for forming an element isolation film of a semiconductor device and the semiconductor device. A pad insulator is constructed on a semiconductor substrate. An over-etching process is performed to recess the semiconductor substrate to a predetermined depth while giving a pad insulator pattern. After an insulator spacer is formed at the side wall of the pad insulator pattern, the exposed region of the semiconductor substrate is thermally oxidized to grow an oxide which is, then, removed to form a recess. An element isolation film is formed in the recess by break-through field oxidation and high temperature field oxidation. The element isolation film thus obtained can prevent the field oxide &ldquo;ungrowth&rdquo; phenomenon and at the same time mitigate the field oxide thinning effect as well as improve the properties of the gate oxide.

Method for forming an isolation region in a semiconductor device and resulting structure using a two step oxidation process

The present invention relates to a method for manufacturing ferroelectric capacitor, capable of preventing the hydrogen gas generated in the process for the overlying interlayer insulating layer from being diffused into the underlying ferroelectric material film and/or the first diffusion barrier TiO,film, thereby eliminating the aggravation of the characteristics of the ferroelectric capacitor. As ferroelectric material film, SrBi,Ta,O,(simply SBT) film or PZT film can be formed. For PZT film, TiO,is used for a first diffusion barrier film, silicon nitride such as Si,N,or SiON is used for a second diffusion barrier film, and SiO,film can be provided under the silicon nitride film as a stress buffer film. Alternatively, for the SBT, a silicon nitride film is provided as a diffusion barrier film and a SiO,film is further provided under the silicon nitride film as a stress buffer film. Such a silicon nitride film prevents hydrogen or oxygen generated in the following process from being introduced into the underlying ferroelectric material film. Thus, the ferroelectric material can be remain stable in stochiometry in relatively long time, thereby improve the reliability thereof.

Method for manufacturing ferroelectric capacitor

A method for forming a field oxide of a semiconductor device and the semiconductor device. In order to form the field oxide, first, an element isolation mask is constructed on a semiconductor substrate. Then, a nitride spacer is formed at the side wall of the mask. At this time, a nitrogen-containing polymer is produced on the field region. The exposed region of the semiconductor substrate is oxidized at a temperature of 1,050-1,200.degree. C. to grow a recess-oxide while transforming the nitrogen-containing polymer into a nitride. Thereafter, the recess oxide is removed, together with the nitride, to create a trench in which the field oxide is formed through thermal oxidation. Therefore, the method can prevent an FOU phenomenon upon the growth of a field oxide and improve the field oxide thinning effect, thereby bringing a significant improvement to the production yield and the reliability of a semiconductor device.

Method for forming field oxide of semiconductor device and the

A method for forming an element isolating film of a semiconductor device, which is capable of achieving a reduction in topology and a reduction in the occurrence of a bird's beak phenomenon, so that subsequent processes can be easily carried out to fabricate highly integrated semiconductor devices. The method includes the steps of sequentially forming a pad oxide film and a first nitride film over a semiconductor substrate, over-etching the first nitride film and the pad oxide film by use of an element isolating mask, thereby forming a first hole in the semiconductor substrate, cleaning the entire upper surface of the resulting structure by use of an etch solution, forming second-nitride film spacers on side walls of the selectively etched first nitride film, pad oxide film and first hole, forming a second hole in the first hole of the semiconductor substrate by use of the first nitride film and second-nitride film spacers as a mask, thermally oxidizing the surface of the second hole, thereby forming a thermal oxide film, and removing the first nitride film, pad oxide film and second-nitride film spacers, thereby forming an element isolating film.

Method for forming element isolating film of semiconductor device

A method for forming a field oxide of a semiconductor device is disclosed, which takes advantage of wet oxidation at an early stage of field oxidation to prevent the ungrowth of field oxide and dry oxidation at a later stage of field oxidation to make the slope of field oxide positive, thereby improving the production yield and the reliability of semiconductor device.

Method for forming field oxide of semiconductor device using wet and dry

A method for isolating the elements of semiconductor devices, in which bird's beak can be restrained by accumulating nitrogen atoms between a pad oxide film and a silicon substrate and the etch depth of a silicon substrate can be controlled by use of wet etch to remove the oxide which is grown on the silicon substrate at a low temperature after formation of nitride spacer, thereby reproducing good profiles of the field oxide film.

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Ichon, South Korea

Young Bog Kim