Hynix Semiconductor Inc.

Young-Bog Kim

Se-Aug Jang

Hong-Seon Yang

Tae-Woo Jung

Hyun-Chul Sohn

Hyung-Soon Park

Seo-Min Kim

Woo-Jin Kim

Eung-Rim Hwang

Disclosed are a memory device and a method for fabricating the same. The memory device includes: a substrate provided with a trench; a bit line contact junction formed beneath the trench; a plurality of storage node contact junctions formed outside the trench; and a plurality of gate structures each being formed on the substrate disposed between the bit line contact junction and one of the storage node contact junctions. Each sidewall of the trench becomes a part of the individual channels and thus, channel lengths of the transistors in the cell region become elongated. Accordingly, the storage node contact junctions have a decreased level of leakage currents, thereby increasing data retention time.

Memory device and method for fabricating the same

Growing community of inventors

Kyoungki-do, South Korea

Young-Bog Kim