Electronics and Telecommunications Research Institute

Yonsei University

Young Ahn Leem

Kyung Hyun Park

Chul-Wook Lee

Dong-Hun Lee

Dong Churl Kim

Sang-Pil Han

Yongsoon Baek

Namje Kim

Eun Deok Sim

Oh Kee Kwon

Sung Bock Kim

Dae Su Yee

Min Yong Jeon

Hyunsung Ko

Kisoo Kim

Su Hwan Oh

Young-Tak Han

Jaeheon Shin

Eundeok Sim

Gyungock Kim

Woo Young Choi

O-Kyun Kwon

Kwang Hyun Lee

Yun Chur Chung

Ki Soo Kim

Young Tak Han

Jung-Ho Song

Hyun Sung Ko

Yun Sub Chung

Oh-Kee Kwon

Chul Wook Lee

A light comb generating device according to a disclosed embodiment includes a light source for generating light in a reference wavelength band and outputting the generated light, and an optical comb generator for generating a light comb having a reference comb interval from the output light, wherein the light source changes a wavelength of the output light as much as a reference frequency interval for every reference time interval, the light comb is generated within a wavelength range of the reference frequency interval, and the reference wavelength band may be at least about 3 &#x3bc;m and no greater than about 30 &#x3bc;m.

Light comb generating device and spectrometers including same

Provided herein is a radio frequency probe apparatus including a RF waveguide including a ground electrode and a signal electrode, a register connected to the signal electrode, a RF connector including an outer conductor connected to the ground electrode, an inner conductor connected to the signal electrode, and a dielectric body filling a portion between the outer conductor and the inner conductor, and a single tip probe connected to the signal electrode of the RF waveguide, or the register.

Radio frequency probe apparatus

Provided are a spot size converter and a method of manufacturing the spot size converter. The method includes stacking a lower clad layer, a core layer, and a first upper clad layer on a substrate, tapering the first upper clad layer and the core layer in a first direction on a side of the substrate, forming a waveguide layer on the first upper clad layer and the lower clad layer, and etching the waveguide layer, the first upper clad layer, the core layer, and the lower clad layer such that the waveguide layer is wider than a tapered portion of the core layer on the side of the substrate and has the same width as that of the core layer on another side of the substrate.

Spot size converters and methods of manufacturing the same

Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.

Distributed feedback-laser diodes

Provided are a THz-wave generation/detection module and a device including the same, which increase heating efficiency and are miniaturized. The module includes a photomixer chip, a lens, a PCB, and a package. The photomixer chip includes an active layer, an antenna, and a plurality of electrode pads. The lens is disposed on the photomixer chip. The PCB includes a plurality of solder balls connected to the electrode pads, under the photomixer chip. The package surrounds a bottom and side of the PCB, and dissipates heating of the active layer, which is transferred from the electrode pad of the photomixer chip to the PCB, to outside.

THz-wave generation /detection modules and devices including the same

A high-efficiency laser diode is provided. Since a &#x3bb;/4 phase-shifted distributed feedback (DFB) laser diode has a great coupling coefficient, mode stability is poor due to spatial hole burning when multiplication of the coupling coefficient by length of a resonator is equal to or greater than 2. In the inventive concept, a region capable of controlling spatial hole burning is inserted into a semiconductor laser diode structure. Thus, an ultrahigh-speed pulse laser diode having a repetition rate in the band ranging from 100 GHz to 300 GHz is obtained. In addition, a single-mode laser diode with improved energy use efficiency is implemented by changing the configuration of a laser diode.

Laser diode for controlling spatial hole burning and optical pulse generating method

Provided are a dual mode semiconductor laser and a terahertz wave apparatus using the same. The dual mode semiconductor laser includes a distributed feedback laser structure section including a first diffraction grating on a substrate and a distributed Bragg reflector laser structure section including a second diffraction grating on the substrate. A first wavelength oscillated by the distributed feedback laser structure section and a second wavelength oscillated by the distributed Bragg reflector laser structure section are different from each other, and the distributed feedback laser structure section and the distributed Bragg reflector laser structure section share the same gain medium with each other.

Dual mode semiconductor laser and terahertz wave apparatus using the same

Provided is a multi-wavelength optical source generator. The multi-wavelength optical source generator includes: a gain part generating a plurality of lights through a plurality of gain waveguides; a reflective part transmitting or reflecting lights provided from each of the plurality of gain waveguides according to a wavelength; and a multiplexing part multiplexing a plurality of lights transmitted and outputted through the reflective part.

Multi-wavelength optical source generator

Disclosed is a terahertz wave generator which includes a dual mode semiconductor laser device configured to generate at least two laser lights having different wavelengths and to beat the generated laser lights; and a photo mixer formed on the same chip as the dual mode semiconductor laser device and to generate a continuous terahertz wave when excited by the beat laser light.

Terahertz wave generator

Provided is a laser device. In the laser device, an active layer is connected to a stem core of a 1&#xd7;2 splitter on a substrate, a first diffraction grating is coupled to a first twig core of the 1&#xd7;2 splitter, and a second diffraction grating is coupled to a second twig core of the 1&#xd7;2 splitter. An active layer-micro heater is designed to supply heat to the active layer. First and second micro heaters are designed to supply heats to the first and second diffraction gratings, respectively, thereby varying a Bragg wavelength.

Laser device

Provided is a multiple distributed feedback laser device which includes a first distributed feedback region, a modulation region, a second distributed feedback region, and an amplification region. An active layer is disposed on the substrate of the first distributed feedback region, the modulation region, the second distributed feedback region, and the amplification region. A first diffraction grating is disposed in the first distributed feedback region to be coupled to the active layer in the first distributed feedback region. A second diffraction grating is disposed in the second distributed feedback region to be coupled to the active layer in the second distributed feedback region. The multiple distributed feedback laser device further includes a first micro heater configured to supply heat to the first diffraction grating and a second micro heater configured to supply heat to the second diffraction grating.

Multiple distributed feedback laser devices

Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.

Resonator of hybrid laser diode

Provided are an apparatus for and a method of generating millimeter waves, in which millimeter-wave generation and frequency up-conversion can be achieved at the same time using a single device. The apparatus includes a mode-locking laser diode (LD) which has a distributed feedback (DFB) sector and a gain sector and generates high-frequency optical pulses through a passive mode locking process, a modulator which modulates an external optical signal using an electric signal and injects the modulated optical signal to the mode-locking LD to lock the optical pulses, and a radio frequency (RF) locking signaling unit which injects the electric signal to the modulator.

Apparatus for and method of generating millimeter waves

Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.

Self-pulsating laser diode

Provided are a laser diode generating passive mode locking that does not contain non-linear sector of an SA, and a method of creating an optical pulse using the same diode. The laser diode includes a DFB sector serving as a reflector and a gain sector. The gain sector is connected to the DFB sector and includes an as-cleaved facet formed at the end of the gain sector. When a current less than a threshold current is applied to the DFB sector to allow the DFB sector to operate as a reflector, passive mode locking occurs swiftly and therefore a sector of the SA is not required, which makes manufacturing simple. Also, it is possible to effectively extend a frequency variable region compared to using of the SA.

Growing community of inventors

Daejeon, South Korea

Young Ahn Leem