Samsung Electronics Co., Ltd.

Youn-Won Park

Su-Ryun Lee

Byung-Ki Lee

Hong-Suk Choi

Chun-Um Kong

Provided are a memory device, a memory system, and a control method performed by the memory system. The control method includes operations of generating, by a first function block of the memory system, a main request comprising a first sub-request for a first operation that is requested by an external source and a second sub-request for a second operation that is dependent upon a processing result of the first operation; processing, by a second function block of the memory system, the first sub-request or the second sub-request; and when a processing result of the first sub-request performed by the second function block is a fail, transmitting, by a third function block of the memory system, abortion information to the first function block in response to the main request, regardless of processing the second sub-request.

Memory device, memory system, and control method performed by the memory system

Storage devices including a memory device and methods of operating the storage devices are provided. The storage devices may include a controller which is configured to program first bit data and second bit data paired with the first bit data into a memory device. The first bit data may be less significant bit data than the second bit data. The controller may be configured to selectively perform or skip backup of the first bit data when programming the second bit data.

Growing community of inventors

Suwon-si, South Korea

Youn-Won Park