Samsung Electronics Co., Ltd.

Adeka Corporation

Dnf Co., Ltd.

Namlab Ggmbh

Youn-soo Kim

Jae-hyoung Choi

Jae-Soon Lim

Youn-Joung Cho

Sang-Yeol Kang

Kyu-Ho Cho

Jin-sun Lee

Sun-Min Moon

Han-jin Lim

Hyung-suk Jung

Se-hoon Oh

Gyu-Hee Park

Jae-wan Chang

Se-hyoung Ahn

Naoki Yamada

Min-Young Park

Seung-min Ryu

Jong-Cheol Lee

Hyun-jun Kim

Suk-Jin Chung

Haruyoshi Sato

Yong-jae Lee

Ki-Vin Im

Cha-Young Yoo

Jin-Su Lee

Hiroyuki Uchiuzou

Myong-Woon Kim

Jun-goo Kang

Sang-Ick Lee

Chang-su Woo

Sung-Jin Kim

Jung-Ho Lee

Ki-chul Kim

Hyun Uk Park

Wan-don Kim

Seok-Woo Nam

Ki-Yeon Park

Ki-yeon Park

Uwe Schroeder

Tsubasa Shiratori

Hoon-Sang Choi

Kang-yong Lee

Seung-Min Ryu

Sang-yeol Kang

Sang-Chul Youn

Kazuki Harano

Eun-Ae Cho

Sang-yong Jeon

Soon-Gun Lee

Sang-Jun Yim

Chin-Moo Cho

Steve Knebel

An integrated circuit device includes a lower electrode, an upper electrode, and a dielectric layer structure between the lower electrode and the upper electrode, the dielectric layer structure including a first surface facing the lower electrode and a second surface facing the upper electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a plurality of grains extending from the first surface to the second surface and a second dielectric layer including a second dielectric material and surrounding a portion of a sidewall of each of the plurality of grains of the first dielectric layer in a level lower than the second surface. The second dielectric material includes a material having bandgap energy which is higher than bandgap energy of the first dielectric material.

Integrated circuit device

A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

Semiconductor devices and method of manufacturing the same

A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.

Semiconductor device and method of manufacturing the same

A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, 

Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound

A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): 

Method of forming tin-containing material film and method of synthesizing a tin compound

A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.

Method of forming a thin film

A method of forming a thin film and an integrated circuit device, including forming a first reaction inhibiting layer chemisorbed on a first portion of a lower film by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of the lower film at a temperature of about 300&#xb0; C. to about 600&#xb0; C.; forming a first precursor layer of a first material chemisorbed on a second portion of the lower film at a temperature of about 300&#xb0; C. to about 600&#xb0; C., the second portion being exposed through the first reaction inhibiting layer; and forming a first monolayer containing the first material on the lower film by supplying a reactive gas to the first reaction inhibiting layer and the first precursor layer and removing the first reaction inhibiting layer from the surface of the lower film, and thus exposing the first portion.

Method of forming thin film and method of manufacturing integrated circuit device using the same

A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

Methods of forming material layer

Lanthanum compound, method of synthesizing lanthanum compound, lanthanum precursor composition, method of forming thin film, and method of manufacturing integrated circuit device

Growing community of inventors

Yongin-si, South Korea

Youn-soo Kim