Samsung Electronics Co., Ltd.

Korea University Research and Business Foundation

Youn-Soo Cheon

Kyungduk Lee

Ho-Sung Ahn

Dae-Won Kim

Dongho Lee

Soo-Woong Lee

Seungjun Oh

Sang-Ryong Park

Seong Geon Lee

Daehyeon Jo

Haedong No

Youjin Jeon

Hyeji Yun

Jongtaek Seong

Jungeol Baek

Sewoong Lee

A storage device including: a flash memory including a selected word line and an adjacent word line adjacent to the selected word line; and a memory controller configured to provide a select read voltage to the selected word line and a pass voltage to the adjacent word line during a read operation, the pass voltage being higher than the select read voltage, and wherein the memory controller is further configured to determine whether the selected word line is a hot spot read word line based on a deterioration level of the adjacent word line, and perform a word line reclaim operation for the adjacent word line when the selected word line is the hot spot read word line.

Storage device including a read reclaim module and a reclaim operation method thereof

An operating method of a storage controller which is configured to communicate with a host and with a non-volatile memory device. The method may include: generating an error count by counting a number of first-type error bits of a target super block of the non-volatile memory device, determining whether the error count exceeds a first reference value, fetching setting data from a latch unit of the non-volatile memory device, based on determining that the error count exceeds the first reference value, determining whether reference setting data of a setting table matches the fetched setting data, the reference setting data indicating information about a designed operating environment of the non-volatile memory device, and providing a reset request to the latch unit, based on determining that the reference setting data does not match the fetched setting data.

Storage controllers performing reset operations using setting data, operating methods of storage controllers, and operating methods of storage devices including storage controllers

A data storage device including: a memory device including a plurality of memory blocks; and a memory controller configured to control the memory device, wherein the plurality of memory blocks are connected with row lines, wherein the row lines include word lines, wherein the memory controller is further configured to: check whether a resistive defect occurs at the row lines except for the word lines; and set a program operation time of a memory block corresponding to a row line, at which the resistive defect occurs, to be longer than a program operation time of the other memory blocks.

Data storage device for checking a defect of row lines and an operation method thereof

A method of operating a memory device includes reading a first page of memory cells containing at least one worn-out memory cell therein using a read voltage, from a first memory block, and reading a second page of memory cells, which extends adjacent to the first page in the first memory block, using the read voltage. An operation is performed to determine a match rate between a position of a column including a '0' bit in the first page with a position of a column including a “0” bit in the second page. Thereafter, the second page is read by adjusting a read pass voltage applied to a word line of another page in the first memory block, when the match rate exceeds a threshold match rate.

Semiconductor memory devices that support enhanced data recovery operations

Provided is a method for operating a memory device including performing a first setting operation on a first operation, reading map data based on the first setting operation, and performing a second setting operation on a second operation.

Method for operating memory device

A storage device includes a nonvolatile memory device and a memory controller. An operating method of the storage device includes sending, at the memory controller, a first read command and first offset information to the nonvolatile memory device, performing, at the nonvolatile memory device, first read operations based on the first read command and the first offset information, sending, at the nonvolatile memory device, a result of the first read operations as first data to the memory controller, sending, at the memory controller, a second read command, read voltage levels, and second offset information to the nonvolatile memory device, performing, at the nonvolatile memory device, second read operations based on the second read command, the read level information, and the second offset information, and sending, at the nonvolatile memory device, results of the second read operations as second data to the memory controller.

Storage device including nonvolatile memory device, operating method of storage device, and operating method of electronic device including nonvolatile memory device

Provided herein are a nonvolatile memory device and a method of programming the same. The nonvolatile memory device includes a memory cell array including a plurality of word lines having a first word line and a plurality of memory cells connected to the first word line. The plurality of memory cells includes a plurality of monitoring cells and a plurality of data cells each data cell configured to store N-bit data, N being a natural number. The nonvolatile memory device is configured to perform a first program on the plurality of data cells and a detection program different from the first program on the one or more monitoring cells after performing the first program.

Nonvolatile memory device and method of programing with capability of detecting sudden power off

A storage device includes a memory and a memory controller which transmits a command to the memory. The memory includes at least one memory cell array, a memory temperature sensor which measures a temperature of the memory, and a control logic. The control logic outputs a busy signal in response to the command, receives the temperature of the memory from the memory temperature sensor in response to the command, and determines whether to perform a command operation according to the command on the memory cell array based on the received temperature of the memory.

Growing community of inventors

Hwaseong-si, South Korea

Youn-Soo Cheon