Samsung Electronics Co., Ltd.

Youn-Kyung Wang

Kyoung-mi Kim

Young-Ho Kim

Jae-Ho Kim

Young-ho Kim

Mi-ra Park

Yeu-Young Youn

Jae-Hyun Kim

Young-Hoon Kim

Myung-Sun Kim

Jae-ho Kim

Boo-deuk Kim

Hong Il Lee

Mi-Ra Park

A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R, RR, and Rindependently represents H, OH, CH, CH, CH, CHor CH, R' represents CH, CH, CH, CH, CHor CH, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

Siloxane polymer composition

There are provided a method of forming a fine pattern employing self-aligned double patterning. The method includes providing a substrate. First mask patterns are formed on the substrate. A reactive layer is formed on the substrate having the first mask patterns. The reactive layer adjacent to the first mask patterns is reacted using a chemical attachment process, thereby forming sacrificial layers along outer walls of the first mask patterns. The reactive layer that is not reacted is removed to expose the sacrificial layers. Second mask patterns are formed between the sacrificial layers adjacent to sidewalls of the first mask patterns facing each other. The sacrificial layers are removed to expose the first and second mask patterns and the substrate exposed between the first and second mask patterns. The substrate is etched using the first and second mask patterns as an etching mask.

Method of forming fine pattern employing self-aligned double patterning

Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same

In a method for analyzing photoresist, light having a wavelength which responds to a photoresist film is selected. The photoresist film is exposed to the selected light. Changes of components and properties of the photoresist film are analyzed while the photoresist film is being exposed to the selected light.

Method and apparatus for analyzing a photoresist film

The photoresist composition of the present invention includes a solvent mixture, a resin, a photo acid generator, and a quencher, the solvent mixture comprising a first solvent containing an ether compound and a second solvent having a polarity stronger than the first solvent, wherein an amount of the first solvent is in a range of about 61% to about 79% by weight, and an amount of the second solvent is in a range of about 21% to about 39% by weight based on a total weight of the solvent mixture.

Photoresist composition and method of forming a pattern using the same

A photoresist composition for preventing exposing failures and a method of forming a pattern using the same are disclosed. The photoresist composition preferably comprises about 0.1% to about 0.5% by weight of a photo acid generator, and about 2% to about 10% by weight of a polymer resin, the PAG including a monophenyl sulfonium compound, a triphenyl sulfonium compound or a mixture thereof. The footing phenomenon and the top loss of a pattern are sufficiently prevented.

Photoresist composition and method of forming a pattern using same

In a photosensitive resin, a photoresist composition having the photosensitive resin, and a method of forming a photoresist pattern by using the photoresist, the photosensitive resin includes a blocking group substituted for an acid. The photosensitive resin has a weight-average molecular weight of from about 6,000 up to about 8,000. The photosensitive resin has a blocking ratio of from about 5% up to about 40%.

Photosensitive resin, photoresist composition having the photosensitive resin and method of forming a photoresist pattern by using the photoresist composition

Growing community of inventors

Gyeonggi-do, South Korea

Youn-Kyung Wang