Samsung Sdi Co., Inc.

Youn Jin Cho

Jong Won Lee

Won Jung Kim

Yoon Young Koo

Tae Won Park

Eui Rang Lee

Jung Min Choi

Jun Young Jang

Kwen Woo Han

Hyeong Mook Kim

Ki Wook Hwang

Yong Woon Yoon

Sang Ran Koh

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition including a solvent, the solvent being a polar solvent or a non-polar solvent; an abrasive agent; and a biocide, wherein the abrasive agent includes silica modified with a silane containing two nitrogen atoms or silica modified with a silane containing three nitrogen atoms, the biocide includes a compound of Formula 3:

CMP slurry composition for polishing tungsten pattern wafer and method of polishing tungsten pattern wafer using the same

An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed, 

Composition for etching silicon nitride film and etching method using same

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition including a solvent, the solvent including a polar solvent or a non-polar solvent; an abrasive agent; and an oxidizing agent, wherein the abrasive agent includes silica modified with an amino silane that includes three nitrogen atoms.

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Suwon-si, South Korea

Youn Jin Cho