Cheil Industries Inc.

Samsung Sdi Co., Inc.

Youn-Jin Cho

Chung-Heon Lee

Yong-Woon Yoon

Sung-Jae Lee

Yun-Jun Kim

Chul-Ho Lee

Yoo-Jeong Choi

You-Jung Park

Joon-Young Moon

Young-Min Kim

Jin-Hee Bae

Taek-Soo Kwak

Hyo-Young Kwon

Kwen-Woo Han

Han-Song Lee

Hea-Jung Kim

Eun-Su Park

Byeong-Gyu Hwang

Bo-Sun Kim

Wan-Hee Lim

Jin-Woo Seo

Seung-Wook Shin

Sang-jun Choi

Hwan-Sung Cheon

Sang-Kyun Kim

Jun-Young Jang

Bum-Jin Lee

Sae-Mi Park

Hye-Won Kim

Hyun-Ji Song

Go-Un Kim

Yoong-Hee Na

Sun-Hae Kang

Yo-Choul Park

A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.

Composition for forming a silica based layer, method for manufacturing silica based layer, and electronic device including the silica based layer

A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 &#x3bc;m to about 1 &#x3bc;m is less than or equal to about 10/ml.

Composition for forming silica based layer, and method for manufacturing silica based layer

Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition. 

Monomer, hardmask composition comprising monomer, and pattern forming method using hardmask composition

Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. In Chemical Formula 1, A, A', L and n are the same as in the detailed description.

Monomer for a hardmask composition, hardmask composition comprising the monomer, and method for forming a pattern using the hardmask composition

Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the same. In the above Chemical Formula 1, A, A', L, L&#x2032;, X and n are the same as defined in the specification.

Monomer for hardmask composition, hardmask composition including said monomer, and method for forming pattern using said hardmask composition

Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition.  In the above Chemical Formula 1, Ato A, Xto X, L, L, n and m are the same as described in the detailed description.

Monomer, hardmask composition including monomer, and method for forming pattern by using hardmask composition

Disclosed are a polymer represented by the Chemical Formula 1, a monomer represented by the Chemical Formula 2, and a solvent, wherein the monomer is included in the same or a higher amount than the polymer, and a method of forming patterns using the same.

Hard mask composition and method for forming pattern using same

Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same.

Monomer, hard mask composition comprising said monomer, and method for forming pattern using said hard mask composition

Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern.

Monomer for hardmask composition, hardmask composition including monomer, and pattern forming method using hardmask composition

A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1: 

Rinse liquid for insulating film and method of rinsing insulating film

A monomer for a hardmask composition represented by the following Chemical Formula 1, 

Monomer for hardmask composition and hardmask composition including the monomer and method of forming patterns using the hardmask composition

A composition for a hardmask including copolymer including repeating units represented by Chemical Formulae 1 and 2 and a solvent, a method of forming a pattern using the same, and a semiconductor integrated circuit device including a pattern formed using the method are provided.

Composition for hardmask, method of forming patterns using the same, and semiconductor integrated circuit device including the patterns

A monomer for a hardmask composition is represented by the following Chemical Formula 1, 

A hardmask composition includes a monomer represented by the following Chemical Formula 1 and an aromatic ring-containing polymer, 

Hardmask composition and method of forming patterns and semiconductor integrated circuit device including the patterns

Forming a dual damascene structure includes forming a first insulation layer and a second insulation layer, forming a resist mask, forming a via hole down to a lower end of the first insulation layer, forming a hardmask layer in the via hole and on the second insulation layer using a spin-coating method, forming a resist mask, forming a first trench hole down to a lower end of the second insulation layer, respectively removing a part of the hardmask layer in the via hole and a part of the hardmask layer on the second insulation layer, forming a second trench hole by removing a part of the first insulation layer between a top corner of the hardmask layer remaining in the via hole and a bottom corner of the first trench hole, removing the hardmask layer, and filling the via hole and the second trench hole with a conductive material.

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Uiwang-si, South Korea

Youn-Jin Cho