Samsung Electronics Co., Ltd.

Youn-Ho Lee

Min-Young Won

Jin-Whal Kim

Jae-Won Lee

Woon-Kyung Lee

Eui-Do Kim

Hyun-Soo Yoon

Hee-Youl Kim

Byung-Chun Chung

A heat treatment apparatus for manufacturing a liquid crystal display panel through an in-situ process includes a body and a hardening unit, an annealing unit, and a transferring unit disposed on the body. The hardening unit heats a sealing member within a liquid crystal display panel to harden the sealing member. The annealing unit anneals liquid crystal within the liquid crystal display panel sealed by the sealing member. The transferring unit transfers the liquid crystal display panel between the hardening unit and the annealing unit. Therefore, the sealing member may be hardened and the liquid crystal may be sealed through an in-situ process to enhance productivity.

Device for cooling LCD panel and heat treatment apparatus having the same

An inkjet printing system includes; a stage configured for mounting a substrate thereon, an inkjet head which drips an ink droplet on the substrate, a conveying device which moves the inkjet head, and a measuring device which measures a height of the ink droplet on the substrate.

Inkjet printing system and manufacturing method of display device using the same

A license-management system and method is provided. A method of issuing a proxy certificate includes transmitting a proxy-certificate-issuance-request message to a license server in order for the local license manager to acquire an authority to issue a license by a local license manager; enabling the license server to verify the proxy-certificate-issuance-request message; if the proxy-certificate-issuance-request message is valid, transmitting a proxy certificate to the local license manager by the license server, the proxy certificate including information regarding the authority to issue a license; and verifying the proxy certificate by the local license manager.

License management system and method

A nonvolatile memory device is provided in which cell uniformity is significantly improved. The device includes a plurality of burial N diffusion layers extending over the surface of a semiconductor substrate. The plurality of burial N diffusion layers are the source/drains of cell transistors and the sub bit-lines of the memory cell array. The device additionally includes a plurality of word lines formed over the semiconductor substrate with gate dielectrics interposed therebetween. The plurality of word lines extend perpendicularly to the burial N diffusion layers. A plurality of select lines extend parallel to the word lines and selectively transfer external electrical signals via main bit-lines to the sub bit-lines. The main bit-lines extend parallel to said sub bit-lines. Finally, dummy lines extend parallel to the word lines in the spaces between the select lines and the adjacent word lines.

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Cheonan-si, South Korea

Youn-Ho Lee