Fujifilm Corporation

Fujifilm Dimatix, Inc.

Emitronix Inc.

Youming Li

Jeffrey Birkmeyer

Yoshikazu Hishinuma

Takamichi Fujii

Christoph Menzel

Takayuki Naono

Shinya Sugimoto

Darren Todd Imai

Mats G Ottoson

Mats G Ottosson

Steve Deming

Wingo Huang

A piezoelectric device and method of manufacturing the same and an inkjet head are described. In one embodiment, the inkjet print head comprises a plurality of jets, wherein each of the plurality of jets comprises a nozzle, a pressure chamber connected with the nozzle, a piezoelectric body coupled to the pressure chamber, and an electrode coupled to the piezoelectric body to cause displacement of the piezoelectric body to apply pressure to the pressure chamber in response to a voltage applied to the electrode; and wherein electrodes of two or more of the plurality of jets have different sizes to cause their associated piezoelectric bodies to have a uniform displacement amount when the voltage is applied to the electrodes.

Piezoelectric device and method for manufacturing an inkjet head

Multi-layered thin film piezoelectric material stacks and devices incorporating such stacks. In embodiments, an intervening material layer is disposed between two successive piezoelectric material layers in at least a portion of the area of a substrate over which the multi-layered piezoelectric material stack is disposed. The intervening material may serve one or more function within the stack including, but not limited to, inducing an electric field across one or both of the successive piezoelectric material layers, inducing a discontinuity in the microstructure between the two successive piezoelectric materials, modulating a cumulative stress of the piezoelectric material stack, and serving as a basis for varying the strength of an electric field as a function of location over the substrate.

Multi-layered thin film piezoelectric devices and methods of making the same

A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, wherein the cathode is configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, and a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, and a heater to heat the substrate supported on the chuck. The chuck includes a body and a graphite heat diffuser supported on the body and configured to contact the substrate.

Physical vapor deposition with heat diffuser

Piezoelectric material is shaped by plasma etching to form deep features with high aspect ratios, and desired geometries.

Etching piezoelectric material

An inkjet device includes a pumping chamber bounded by a wall, a piezoelectric layer disposed above the pumping chamber, a ring electrode having an annular lower portion disposed on the piezoelectric layer. A moisture barrier layer covers a remainder of the piezoelectric layer over the pumping chamber that is not covered by the annular lower portion of the ring electrode.

Passivation of ring electrodes

A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate.

Physical vapor deposition with phase shift

A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.

Physical vapor deposition with impedance matching network

Piezoelectric actuators having a composition of Pb(ZrTi)ONb, where x&#x3e;&#x2212;0.02 and y&#x3e;0 are described. The piezoelectric material can have a Perovskite, which can enable good bending action when a bias is applied across the actuator.

Sputtered piezoelectric material

A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, wherein the cathode is configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, a clamp configured to hold the substrate to the chuck, wherein the clamp is electrically conductive, and a plurality of conductive electrodes attached to the clamp, each electrode configured to compress when contacted by the substrate.

Physical vapor deposition with multi-point clamp

A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, a shield, and an anode. The cathode is inside the vacuum chamber, and the cathode includes a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The anode includes an annular body and an annular flange projecting inwardly from the annular body, and the annular flange is positioned to define a volume below the target for the generation of plasma.

Shaped anode and anode-shield connection for vacuum physical vapor deposition

A MEMS device with a thin piezoelectric actuator is described. A substrate with a first surface has a crystalline orientation prompting layer on the first surface. A piezoelectric portion contacts the crystalline orientation prompting layer and has an orientation corresponding to the orientation of the crystalline orientation prompting layer. A dielectric material surrounds the piezoelectric portion. The dielectric material is formed of an inorganic material.

Thin film piezoelectric actuators

A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, and anode, and a shield. The cathode is inside the vacuum chamber and includes a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber and includes an annular body and a plurality of concentric annular projections extending from the annular body.

Chamber shield for vacuum physical vapor deposition

A contact structure for group III-V and group II-VI compound semiconductor devices, generally used as a light emitting diode (LED), a laser diode (LD), or a photodiode (PD), comprising p-type and/or n-type conduction is disclosed. The contact structure comprises a stack of multiple layers of metals and transparent conducting oxide. The first layer of the contact structure is in direct contact to the semiconductor and comprises at least one of indium, tin, nickel, chromium and zinc, or an alloy or combination of layers thereof. The second layer of the structure is in direct contact to the first layer and comprises at least one of Indium Tin Oxide, Indium oxide, and Tin oxide, or a combination thereof. The optional third layer of the structure contacts the second layer and comprises at least one of Au, Al, Pt, Pd, Mo, Cr, Rh, Ti. The third layer may be a contact pad contacting a smaller portion of the second layer. A preferred thermal anneal of one or more layers of the contact structure further improves semiconductor device performance.

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San Jose, CA, United States of America

Youming Li