Toyo Tanso Co., Ltd.

Kwansei Gakuin Educational Foundation

Youji Teramoto

Satoru Nogami

Satoshi Torimi

Masato Shinohara

Tadaaki Kaneko

Koji Ashida

Norihito Yabuki

Yasunori Kutsuma

Makoto Kitabatake

Yusuke Sudo

Takuya Sakaguchi

In a method for manufacturing a reformed SiC wafer(a surface treatment method for a SiC wafer) having its surface that is reformed by processing an untreated SiC waferbefore formation of an epitaxial layerthe method includes a surface reforming step as described below. That is, the untreated SiC waferincludes BPDs as dislocations parallel to an inside of a (0001) face, and TEDs. Property of the surface of the untreated SiC waferis changed so as to have higher rate in which portions having BPDs on the surface of the untreated SiC waferpropagate as TEDs at a time of forming the epitaxial layer

Method for manufacturing reformed sic wafer, epitaxial layer-attached sic wafer, method for manufacturing same, and surface treatment method

Provided is a surface treatment method for a SiC substrate (), the method being capable of controlling whether to generate a step bunching or the type of step bunching that is generated. In the surface treatment method in which the surface of the SiC substrate () is etched by heating the SiC substrate () under Si vapor pressure, an etching mode and an etching depth which are determined at least on the basis of an etching rate, are controlled to etch the SiC substrate (), so that a surface pattern of the SiC substrate () after etching treatment is controlled.

Surface treatment method for SiC substrate

Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.

Etching method for SiC substrate and holding container

Growing community of inventors

Kanonji, Japan

Youji Teramoto