Hitachi-High-Technologies Corporation

Youji Takahashi

Susumu Tauchi

Akitaka Makino

Minoru Soraoka

Hideki Kihara

Makoto Kashibe

Tsuyoshi Umemoto

Tsutomu Iida

Tadamitsu Kanekiyo

Yasuo Oogoshi

A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers.

Vacuum processing apparatus

A vacuum processing apparatus comprising a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and amass flow controller unit interposed between two processing chambers for supplying gas to the chambers.

A vacuum processing apparatus includes an outer chamber comprising a vacuum container, an inner chamber in which a plasma used for processing a wafer is generated, the inner chamber being detachably disposed inside of the outer chamber, a wafer holder on which the wafer is located is disposed inside of the inner chamber, and an exhausting device disposed below the wafer holder which exhausts the inside of the inner chamber. The inner chamber is sealed in air-tight manner with respect to a space between the inner chamber and the outer chamber while the space is maintained at a vacuum pressure.

A vacuum processing apparatus comprising a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and a mass flow controller unit interposed between two processing chambers for supplying gas to the chambers.

A vacuum processing apparatus includes a vacuum processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas. The vacuum processing chamber has an axisymmetric structure, including a double wall structure, and a gate valve for sealing an opening through which the object enters the processing chamber.

In power supply and a semiconductor making apparatus and a semiconductor fabricating method using the same, an abnormality can be detected when an offset occurs in a part constituting a closed-loop system of high-frequency power supply or dc power supply for a semiconductor making apparatus. Power supply for receiving a power value setting signal to set strength of power and a power on/off instruction to set on or off of outputting of the power interrupts the supply of the power even in a state in which a subsequent power on/off instruction is on if a power sense signal according to a value obtained by sensing the power exceeds a predetermined value when the power on/off instruction is off.

Power supply, a semiconductor making apparatus and a semiconductor wafer fabricating method using the same

A plasma processing apparatus and method are capable of performing etching with high precision without damaging the semiconductor wafer. The plasma processing apparatus has a plasma generation power supply for generating a plasma within a processing chamber; a high-frequency power supply for applying a high frequency wave to a sample stage installed within the processing chamber; and control means for controlling the plasma generation power supply or the high-frequency power supply based on parameter settings for an output intensity and an output mode for each process step. In this regard, when the process steps are switched, the control means compares parameters for a current process step with those for a next process step and then switches either the output intensities or the output modes before switching the output modes or the output intensities, respectively.

Plasma processing apparatus and method

A high-frequency power supply apparatus for a plasma generation apparatus having a modulator for generating an intermittent high-frequency output on the basis of a modulation reference signal and a peak value setting signal, the high-frequency power supply apparatus having: a first control loop for comparing the peak value of the intermittent high-frequency output detected by a peak value detector with a preset peak value of the high-frequency output so that the output controller controls the peak value of the high-frequency output to be the preset peak value; and a second control loop for calculating an average value of the intermittent high-frequency output based on the preset peak setting value and a preset duty ratio setting value and generating a modulation reference signal for controlling the modulator on the basis of the average value of the high-frequency output detected by a monitor and the average value of the high-frequency output.

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Kudamatsu, Japan

Youji Takahashi