Japan Pionics Co., Ltd.

Youji Nawa

Kenji Otsuka

Takashi Shimada

Satoshi Arakawa

Yukichi Takamatsu

Masako Yamakawa

Kazuaki Tonari

Tomohisa Ikeda

Koshi Ochi

Ryuji Hasemi

Yutaka Amijima

There are disclosed a decompositionally treating agent for fluorocarbons which comprises an aluminum compound and a lanthanoid compound as effective ingredients; a decompositionally treating agent for fluorocarbons which comprises an aluminum compound, a lanthanoid compound and an alkaline earth metal compound as effective ingredients; and a decompositionally treating method for fluorocarbons which comprises decomposing a fluorocarbon by bringing a fluorocarbon-containing gas into contact under heating with a decompositionally treating agent mentioned above or by bringing the above gas into contact under heating with a decompositionally treating agent comprising aluminum oxide as an effective ingredient and thereafter with a decompositionally treating agent comprising a lanthanoid oxide and an alkaline earth metal oxide. It is made possible by the above agent and method to decompose the fluorocarbons contained in an exhaust gas exhausted from a semiconductor manufacturing industry and the like at a decomposition rate of at least 99.9% at a relatively low decomposition temperature of 1000&#xb0; C. or lower without deactivating the agent in a short time, or exhausting a corrosive gas such as hydrogen fluoride in the atmosphere.

Decompositionally treating agent and decompositionally treating method for fluorocarbons

There are disclosed a process for cleaning a harmful gas which comprises bringing the harmful gas containing as a harmful component, an organosilicon compound represented by the general formula: CH CH&mdash;SiR , CH CH&mdash;Si(OR) , CH CHCH &mdash;SiR or CH CHCH &mdash;Si(OR) , wherein R indicates a saturated hydrocarbon group or an aromatic compound group, into contact with a cleaning agent comprising activated carbon adhesively incorporated with at least one species selected from the group consisting of bromine, iodine, a metal bromide and a metal iodide in which the metal is exemplified by copper, lithium, sodium, potassium, magnesium, calcium, strontium, manganese, iron, cobalt, nickel, zinc, aluminum and tin; and a cleaning agent comprising the same. The cleaning process and the cleaning agent enable to practically clean a harmful gas which is exhausted from a semiconductor manufacturing process and the like by the use of a dry cleaning process.

Cleaning process and cleaning agent for harmful gas

Cleaning agent and cleaning process of harmful gas

There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gas containing at least one member selected from the group consisting of nitrogen fluorides, tungsten fluorides, silicon fluorides, hydrogen fluoride and fluorine, especially nitrogen trifluoride into contact with a cleaning agent comprising stannous oxide as an effective ingredient at a temperature of 200.degree. C. at the lowest. The above process makes it possible to clean the harmful gas in a high performance at a relatively low temperature without by-producing a harmful gas or a gas with a fear of causing environmental pollution.

Cleaning process for harmful gas

A detecting agent for detecting at least one member selected from the group consisting of halogen gases and acidic gases which is contained in a gas, wherein the detecting agent comprises a discoloring component which comprises a hydroxide of a transition metal and Congo Red. Halogen gases and acidic gases which are contained in hydrogen, nitrogen, argon, or helium can be detected under a dry condition with a high sensitivity in accordance with the present invention.

Detecting agent

A process for cleaning a harmful gas which comprises bringing a harmful gas containing a halogen gas and/or a halogen compound gas such as hydrogen fluoride, hydrogen chloride, tungsten hexafluoride, silicon tetrafluoride and boron trifluoride into contact with a cleaning agent comprising metal oxides composed principally of copper (II) oxide and manganese (IV) oxide that are spreadingly and adhesively incorporated with sodium formate so as to remove a harmful component from the harmful gas. According to the cleaning process of the present invention, it is possible to remove harmful components from the harmful gas in extremely high efficiency at ordinary temperature, dispensing with heating or cooling irrespective of the concentration of the harmful components. The cleaning capacity of the cleaning agent is favorably maintained without deterioration even when the harmful gas is in a dry state. Furthermore, the cleaning agent can remove the harmful gas in safety without a fear of causing fire or elimination of the harmful component therefrom. The cleaning process is highly useful and significant in that it is well suited for cleaning exhaust gases from a semiconductor manufacturing process as well as an emergency countermeasure against the leakage of harmful gas from a gas cylinder.

Process for cleaning harmful gas

A detecting agent for hydride gases (arsine, phosphine, silane, diborane, selenium hydride etc.) which comprises at least one member selected from molybdic acid, a salt thereof, a molybdenum-containing acid (molybdophosphoric acid, etc.) and a salt thereof, and optionally a cupric salt each as a discoloring component being supported on an inorganic carrier (silica, alumina, silica-alumina, zirconia, etc.). The above detecting agent can detect the above hydride gases contained in the exhaust gas discharged from a semiconductor manufacturing process, with high accuracy, selectivity and sensitivity at a high discoloring rate without being influenced by other gases such as hydrogen gas.

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Kanagawa, Japan

Youji Nawa