Mitsubishi Denki Kabushiki Kaisha

Youji Isota

Tadashi Takagi

Kenji Itoh

Kenichi Maeda

Mitsuhiro Shimozawa

Shuji Urasaki

Hiroaki Nagano

Noriharu Suematsu

Mitsuru Mochizuki

Takatoshi Katsura

Masayoshi Ono

In a multi-layer substrate module receiving from an external earth node supply of a reference potential for grounding, a plurality of ground lines are provided respectively corresponding to a plurality of internal circuits. Moreover, a common node for coupling the ground lines is provided in an insulating layer of the multi-layer substrate module. The common node is electrically coupled to the earth node through a ground pin terminal shared by the plurality of internal circuits. Preferably, the common node is provided in the lowest insulating layer of the multi-layer substrate module. Thus, parasitic inductance of the portion through which an earth current flows, that is, the portion common to the plurality of internal circuits, can be suppressed with a small number of ground pin terminals. Accordingly, the inflow phenomenon of the earth current between the plurality of internal circuits is prevented, enabling stable operation.

Multilayer substrate module and portable wireless terminal

A field effect transistor amplifer has a high gain in a plurality of microwave frequency bands. In a field effect transistor with the gate terminal and the drain terminal thereof connected to a matching circuit on the input side and a matching circuit on the output side, respectively, a resonance circuit which is composed of a series circuit including at least one second inductor and a capacitor and connected in parallel to a resistor, is connected between at least one of the gate terminal of the field effect transistor and the ground and between the drain terminal of the field effect transistor and the ground. When a series circuit including the first inductor, at least one second inductor and the capacitor is resonated and short-circuited, the gain at the resonance frequency is dropped and a gain in the range outside of the desired bands is suppressed. When a series circuit including at least one second inductor and the capacitor and connected to the resistor is resonated and short-circuited, the drop of the gain at the resonance frequency due to the resistor is suppressed. This thereby enables high gains to be obtained in the desired bands.

Field effect transistor amplifier

Growing community of inventors

Hyogo, Japan

Youji Isota