Other

Semiconductor Process Laboratory Co., Ltd.

Canon Sales Co., Inc.

Youichi Yamamoto

Kazuo Maeda

Hiroshi Ikakura

Yoshimi Shioya

Kouichi Ohira

Tomomi Suzuki

Junichi Aoki

Shoji Ohgawara

Taizo Oku

Yuichiro Kotake

Takashi Koromokawa

Masakazu Ushijima

Koji Kawamoto

Osamu Miyata

Hisao Hirata

Minoru Kijima

Makoto Kurotobi

Kijima Minoru

An inverter circuit for discharge lamps for multi-lamp lighting in which the value of a negative resistance characteristic of a fluorescent lamp is controlled, and an excessively set reactance is eliminated by causing a shunt transformer to have a reactance exceeding the negative resistance characteristic. Two coils connected to a secondary winding of a step-up transformer of the inverter circuit are arranged and magnetically coupled to each other to form a shunt transformer for shunting current such that magnetic fluxes generated thereby cancel each other out. Discharge lamps are connected to the coils, respectively, with currents flowing therethrough being balanced. Each discharge lamp is lighted because a reactance of an inductance related to the balancing operation which is in an operating frequency of the inverter circuit, exceeds a negative resistance of the discharge lamps.

Inverter circuit for discharge lamps for multi-lamp lighting and surface light source system

An inverter circuit for discharge lamps for multi-lamp lighting in which the value of a negative resistance characteristic of a fluorescent lamp is controlled, and an excessively set reactance is eliminated by causing a shunt transformer to have a reactance exceeding the negative resistance characteristic. Two coils connected to a secondary winding of a step-up transformer of the inverter circuit are arranged and magnetically coupled to each other to form a shunt transformer for shunting current such that magnetic fluxes generated thereby cancel each other out. Discharge lamps are connected to the coils, respectively, with currents flowing therethrough being balanced. Each discharge lamp is lighted because a reactance of an inductance related to the balancing operation which is in an operating frequency of the inverter circuit, exceeds a negative resistance of discharge lamps.

A process gas consisting of one of N, NO or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.

Semiconductor device and method of manufacturing the same

The present invention relates to a film forming method of forming an interlayer insulating film having a low dielectric constant for covering wiring. The insulating film covering wiring is formed on a substrate by converting into a plasma and reacting a film forming gas including a component selected from the group consisting of alkoxy compounds having Si&mdash;H bonds and siloxanes having Si&mdash;H bonds and an oxygen-containing gas selected from a group consisting of O , N O, NO , CO, CO , and H O.

Film forming method, semiconductor device and semiconductor device manufacturing method

The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N ) to a major deposition gas component consisting of siloxane and N O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film or on a substrate targeted for film formation.

Film forming method, semiconductor device and manufacturing method of the same

The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate on a surface of which a coating insulating film is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer for covering the coating insulating film by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si&mdash;H bonds and siloxane having Si&mdash;H bonds and any one oxygen-containing gas selected from a group consisting of O , N O, NO , CO, CO , and H O.

Semiconductor device and semiconductor device manufacturing method

There is provided the film forming method of forming the insulating film containing silicon on the substrate by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.

Film forming method and semiconductor device

In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate from a surface of which a copper wiring is exposed, the interlayer insulating film consists of multi-layered insulating films and the insulating film , that contacts to the copper wiring , out of the multi-layered insulating films is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N ) and ammonia (NH ) to react.

The present invention relates to a semiconductor device manufacturing method of forming an inter-wiring layer insulating film having a low dielectric constant to cover a copper wiring. In construction, in a semiconductor device manufacturing method of forming an insulating film having a low dielectric constant on a substrate the insulating film is formed by plasmanizing a film forming gas, that consists of at least any one of alkyl compound having siloxane bonds and methylsilane (SiH (CH ) : n&equals;0, 1, 2, 3), any one oxygen-containing gas selected from a group consisting of N O, H O, and CO , and ammonia (NH ) to react.

Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film formed on the film-formed substrate with the exposed wiring , comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring and the interlayer insulating film

Fabrication of a semiconductor device with an interlayer insulating film formed from a plasma devoid of an oxidizing agent

The objectives of the present invention is to provide smaller, lighter and less expensive structure in a starting device for discharge lamp for car use so as to prevent breakage due to vibrations etc. The device having the following arrangement realizes the above-mentioned objective. A starting device for a discharge lamp comprises a socket for mounting the discharge lamp and starting members such as a starting transformer etc. where the starting transformer comprises a bobbin having a core-less structure and a primary coil and a secondary coil wound around the bobbin.

Growing community of inventors

Tokyo, Japan

Youichi Yamamoto