National Institute of Advanced Industrial Science and Technology

Photonics Electronics Technology Research Association

Kohoku Kogyo Co., Ltd.

Youichi Sakakibara

Masahiko Mori

Toshihiro Kamei

Ryohei Takei

Hiromichi Kataura

Tomoya Yoshida

Madoka Tokumoto

Junichi Fujikata

Satoshi Tatsuura

Takashi Kato

Takashi Nishi

Katsuhiro Iwasaki

Makoto Okano

Jun Yamamoto

Yuki Atsumi

Oleksiy Rozhin

Yohji Achiba

Provided is an optical module comprising a substrate, a holder, and a spacer. An optical waveguide is formed in/on the substrate and end parts thereof are protruding from one surface of the substrate. The holder holds an optical fiber and exposes one end part of the optical fiber in such a manner that the one end part of the optical fiber can be optically connected to the end parts of the optical waveguide at a side of one surface of the holder. The spacer is held the one surface of the substrate and the one surface of the holder.

Optical fiber module and method for manufacturing the same

An electro-optical modulator includes a substrate; an optical waveguide formed of a silicon-containing i-type amorphous semiconductoron the substrate; and a silicon-containing p-type semiconductor layerand a silicon-containing n-type semiconductor layerarranged apart from each other with the silicon-containing optical waveguide formed of an i-type amorphous semiconductorinterposed therebetween and constituting optical waveguides together with the silicon-containing optical waveguide formed of an i-type amorphous semiconductor. The silicon-containing p-type semiconductor layerand/or silicon-containing n-type semiconductor layerarea crystalline semiconductor layer.

Electro-optical modulator

An optical semiconductor device in which a first optical waveguidecomprising a silicon-containing amorphous semiconductor layer and a second optical waveguidecontaining a silicon-containing i-type semiconductor layer as a constituent element are disposed in different layers in a range in which optical interaction can occur. An electro-optical modulatorhaving a pin junction structure comprising a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layeris provided to at least a portion of the second optical waveguide, and the index of refraction of the second optical waveguide is varied by the electro-optical modulator, whereby light waves propagated through the first optical waveguide are modulated.

Optical semiconductor device

A method is provided for processing a silicon-based wire optical waveguide, by which an optical transmission loss of the silicon-based wire optical waveguide due to ion irradiation with high energy is suppressed, and an end portion of the silicon-based wire optical waveguide that is three-dimensionally curved in a self-aligning manner is obtained. According to the method a protective film is selectively formed on the silicon-based wire optical waveguide exclusive of the end portion of the silicon-based wire optical waveguide; and ions are implanted to the silicon-based wire optical waveguide in a particular direction, so as to curve the end portion of the silicon-based wire optical waveguide to the particular direction in a self-alignment manner.

Method for processing silicon-based wire optical waveguide

An interlayer light wave coupling device includes a substrate; a first core disposed on the substrate and having a first acute structure; a third core spatially set apart from the first core and having a second acute structure; and a second core disposed between the first core and the third core and having a smaller index of refraction than the first core and the third core. The acute structures of the first core and the third core are disposed so as to have no overlap as viewed from above.

Interlayer light wave coupling device

A semiconductor pointed structure formed at an end portion of the core structure of a semiconductor photonic wire waveguide has a sloped side wall on at least one of the sides that constitute the pointed structure. The semiconductor pointed structure decreases in width and thickness towards the distal end. A method for fabrication of the structure is also disclosed.

Semiconductor pointed structure and method for fabricating same, spot size converter, and non-reflective terminator

In the present invention, a nonionic surfactant is noticed for a function of dispersing a carbon nanotube, and it is found that a mixture solution of an amide-based organic solvent and a polyvinylpyrrolidone (PVP) or of the amide-based organic solvent, the nonionic surfactant, and the polyvinylpyrrolidone (PVP) has an excellent function as a dispersant for the carbon nanotube. Ultrasonication is required for dispersing a carbon nanotube in the dispersant. The ultrasonication may be carried out in the step of dispersing the carbon nanotube in the nonionic surfactant and/or the amide-based polar organic solvent, and then the polyvinylpyrrolidone (PVP) may be mixed with the resultant dispersion. Alternatively, a mixture solution of the nonionic surfactant and/or the amide-based polar organic solvent, and the polyvinylpyrrolidone (PVP) is prepared, and then the ultrasonication may be carried out in the step of dispersing the carbon nanotube therein.

Carbon nanotube dispersed polar organic solvent and method for producing the same

An optical element according to the present invention has a thin film, in which single-wall carbon nanotubes are laminated, and utilizes a saturable absorption function of the single-wall carbon nanotubes. Further, in a method for producing the optical element according to the present invention, the thin film is formed by spraying, to a body to be coated, a dispersion liquid prepared by dispersing the single-wall carbon nanotubes in a dispersion medium. Accordingly, a nonlinear optical element, which can operate in an optical communication wavelength region and which is extremely inexpensive and efficient, and a method for producing the optical element can be provided.

Growing community of inventors

Ibaraki, Japan

Youichi Sakakibara